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GB/T 42676-2023Test method for crystalline quality of semiconductive single crystal—X-ray diffraction method (English PDF)

半导体单晶晶体质量的测试 X射线衍射法

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

August 6, 2023

Implementation date

March 1, 2024

Scope

GB/T 42676-2023 is the English-translated version of 半导体单晶晶体质量的测试 X射线衍射法.

This document describes the use of an X-ray diffractometer to measure the full width at half maximum of the double-crystal rocking curve of a semiconductor material, and so to assess the crystalline quality of a semiconductor single crystal.

The document applies to testing the crystal quality of single crystal materials such as silicon carbide, diamond and gallium oxide and of semiconductor materials such as silicon, gallium arsenide and indium phosphide; the crystal quality of other materials may be tested following it as a reference.

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Document preview — GB/T 42676-2023

National Standard of the People's Republic of China

ICS
77.040
Classification
H 21

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Contents

  • Foreword
  • 1 Scope
  • 2 Normative reference documents
  • 3 Terms and definitions
  • 4 Principles

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents" Drafting.

1 Scope

This document describes the use of X-ray diffractometer to test the half-maximum width of the rocking curve of double crystals of semiconductor materials, and then evaluate the semiconductor single crystal. quality approach.

This document is suitable for testing the crystal quality of single crystal materials such as silicon carbide, diamond, and gallium oxide, and semiconductor materials such as silicon, gallium arsenide, and indium phosphide.

The test of material crystal quality can also be performed with reference to this document.

2 Normative reference documents

The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, the dated quotations For undated referenced documents, only the version corresponding to that date applies to this document; for undated referenced documents, the latest version (including all amendments) applies to this document.

GB/T 14264 Semiconductor material terminology

GB/T 14666 Analytical Chemistry Terminology

GB/T 32267 Terminology for performance measurement of analytical instruments

3 Terms and definitions

The following terms and definitions as defined in GB/T 14264, GB/T 14666 and GB/T 32267 apply to this document.

3.1 chi axis

The axis of the tilted sample formed by the intersection of the sample stage surface and the diffraction plane.

3.2 chi angle

The angle between a crystal plane of the sample and the surface of the sample.

3.3 Phianglephiangle

The angle of rotation of the sample stage around the normal to the sample surface.

3.4 Omega angleomegaangle

The angle between the incident X-ray and the surface of the sample stage.

4 Principles

4.1 The atoms of a single crystal are arranged in a three-dimensional periodic structure. The crystal can be regarded as a series of parallel atoms arranged at a vertical distance d in space.

Formed by a plane, when a beam of parallel monochromatic X-rays is incident on the plane, and the optical path difference between the X-rays shining on adjacent planes is its wavelength

When it is an integer multiple of n times, diffraction (reflection) will occur. When the angle theta between the incident beam and the reflection plane, the X-ray wavelength lambda, and the interplanar spacing When d and diffraction order n simultaneously satisfy Bragg's theorem 2dsintheta=nlambda, the X-ray diffraction beam intensity will reach the maximum value, and theta at this time is […]

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

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