GB/T 42106-2022Nanotechnology—Fabrication of three dimensional nanostructures and devices—A strain method induced by ion beam irradiation (English PDF)
纳米技术 三维纳米结构与器件的加工方法 离子束辐照诱导应变法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
December 30, 2022
Implementation date
July 1, 2023
Scope
GB/T 42106-2022 is the English-translated version of 纳米技术 三维纳米结构与器件的加工方法 离子束辐照诱导应变法.
GB/T 42106-2022 describes a fabrication route for three-dimensional nanostructures and devices in which an ion beam is used to induce strain in upright nanowires or planar nanofilms so that they bend or fold in three dimensions.
It covers the processing principle and the structures that can be built with it, the materials and the equipment, the environmental conditions - temperature, humidity and cleanliness - and the processing itself: substrate cleaning, the route starting from upright nanowires, the route starting from planar nanofilms, and storage of the result.
It defines three-dimensional nanostructure, strain and focused ion beam, uses the abbreviations FIB and FIB/FEB, and quotes GB/T 6682 for laboratory water. Issued on 30 December 2022, it has applied since 1 July 2023.
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Document preview — GB/T 42106-2022
National Standard of the People's Republic of China
- ICS
- 07.030
- Classification
- A 42
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Preface
- Introduction
- 1 Scope
- 2 Normative references
- 3 Terms, Definitions and Abbreviations
- 3.1 Terms and Definitions
- 3.2 Abbreviations
- 4 Processing Principle
- 4.1 Principle
- 4.2 Three-dimensional nanostructures that can be constructed using this processing principle
- 5 Materials and Equipment
- 5.1 Materials
- 5.2 Device
- 6 Environmental conditions
- 6.1 Temperature
- 6.2 Humidity
- 6.3 Cleanliness
- 7 processing method
- 7.1 Substrate cleaning
- 7.2 Processing method of erecting nanowires to construct three-dimensional nanostructures
- 7.3 Processing methods for building three-dimensional nanostructures with planar nanofilms
- 7.4 Save
- Reference
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules for Standardization Documents" drafting.
Introduction
Ion beam irradiation can induce strain in the upright nanowires or planar nanofilms, so that the nanowires or nanofilms can be produced in three-dimensional space.
It can be bent or folded, which provides a new processing method for the construction of high-performance three-dimensional nanoelectronic devices, optoelectronics and optical components. this document A processing method specification for constructing three-dimensional nanostructures and devices using ion beam irradiation-induced strain technology is provided.
The issuing authority of this document draws attention to the fact that 7.2 and 7.3 may relate to vertical nanowire or planar nanothin when declaring compliance with this document.
Use of patents related to processing methods for building three-dimensional nanostructures from membranes.
The issuing authority of this document has no position on the veracity, validity and scope of the patent.
The patent holder has committed to the issuing authority of this document that he is willing to cooperate with any applicant on reasonable and non-discriminatory terms and conditions Next, negotiate the licensing of patents. The patent holder's statement is on file with the issuing authority of this document. Relevant information can be obtained through the Get it in the following way.
Please note that in addition to the above patents, some content of this document may still involve patents. The issuer of this document is not responsible for identifying patents responsibility.
1 Scope
This document describes the processing method of ion beam irradiation-induced strain technology to construct three-dimensional nanostructures and devices, mainly including processing principles, Materials and equipment, environmental conditions, processing methods.
This document is applicable to ion beam irradiation to induce spatial strain of vertical nanowires and planar nanofilms, and then realize the three-dimensional space by a Three-dimensional nanostructures and devices composed of two-dimensional nanowires and two-dimensional nanofilms.
2 Normative references
The contents of the following documents constitute the essential provisions of this document through normative references in the text. Among them, dated references For documents, only the version corresponding to the date is applicable to this document; for undated reference documents, the latest version (including all amendments) is applicable to this document.
GB/T 6682 Analytical laboratory water specifications and test methods
3 Terms, Definitions and Abbreviations
3.1 Terms and Definitions
The following terms and definitions apply to this document.
3.1.1 three-dimensional nanostructure
In any dimension of three-dimensional space, one or more parts are interconnected components in the nanoscale region.
3.1.2 ion beam irradiation induced strain
Under ion beam irradiation, the one-dimensional and two-dimensional nanostructures were strained and then deformed.
3.1.3 Focused ion beam
Focus the ion beam to the sub-micron or nanometer scale, and control the ion beam scanning motion through the deflection system and acceleration system, which can realize micro-nano Pattern detection analysis and maskless processing of micro-nano structures.
3.2 Abbreviations
The following abbreviations apply to this document. FIB. focused ion beam (focusedionbeam) FIB/FEB. Focused ion beam/focused electron beam (focusedionbeam/focusedelectronbeam)
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
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