GB/T 41751-2022Test method for radius of curvature of crystal plane in GaN single crystal substrate wafers (English PDF)
氮化镓单晶衬底片晶面曲率半径测试方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
October 14, 2022
Implementation date
February 1, 2023
Scope
GB/T 41751-2022 is the English-translated version of 氮化镓单晶衬底片晶面曲率半径测试方法.
GB/T 41751-2022 specifies how the radius of curvature of the crystal plane of a gallium nitride single crystal substrate wafer is measured with a high-resolution X-ray diffractometer.
It applies to substrates prepared by chemical vapour deposition and by other methods, and the curvature radius of a wafer surface may be tested by reference to it.
The document defines the diffraction plane, the radius of curvature of the crystal plane, the incident angle or omega angle and the rocking curve, and notes that the radius of curvature carries a sign: positive where the nominal crystal plane is convex with respect to the test surface, negative where it is concave.
A clause on the principle of the method explains the diffraction geometry it rests on. It cites GB/T 14264. Issued on 14 October 2022, it has applied since 1 February 2023.
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Document preview — GB/T 41751-2022
National Standard of the People's Republic of China
- ICS
- 77.040
- Classification
- H 21
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Foreword
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 Principles of the method
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for Standardization Work Part 1: Structure and Drafting Rules of Standardization Documents" drafted.
1 Scope
This document specifies a method for measuring the radius of curvature of gallium nitride single crystal substrate platelets using a high-resolution X-ray diffractometer.
This document is applicable to the measurement of the curvature radius of the gallium nitride single crystal substrate prepared by chemical vapor deposition and other methods.
The test of the radius of curvature of the wafer surface can be carried out with reference to this document.
2 Normative references
The contents of the following documents constitute essential provisions of this document through normative references in the text. Among them, dated citations documents, only the version corresponding to that date applies to this document; for undated references, the latest edition (including all amendments) applies to this document.
GB/T 14264 Terms of Semiconductor Materials
3 Terms and Definitions
The terms and definitions defined in GB/T 14264 and the following apply to this document.
3.1 Diffraction plane
The plane formed by the incident X-ray beam and the diffracted beam.
3.2 Radius of curvature of the crystal plane
The intersection of the nominal crystal plane of the substrate sheet and the vertical plane passing through the center point of the substrate sheet can be approximately regarded as an arc, and the arc corresponds to the radius.
Note 1: In this document, the radius of curvature of the crystal plane has a sign, the positive sign indicates that the nominal crystal plane of the sample is convex relative to the test surface, and the negative sign indicates that the sample nominal The crystal planes are concave with respect to the test surface.
Note 2: The crystal plane curvature is the reciprocal of the crystal plane curvature radius.
3.3 Incident angle (omega angle)
The angle between the incident X-ray of the X-ray diffractometer and the surface of the sample stage.
3.4 Rocking curve
The detector position of the diffractometer is fixed, the omega angle is changed continuously and the measurement curve obtained by recording the diffraction intensity.
4 Principles of the method
The atoms of a single crystal are arranged in a three-dimensional periodic structure, and the crystal can be regarded as a series of parallel atomic planes with a vertical distance d.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
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