GB/T 4023.4-2026Discrete semiconductor devices - Part 4: Microwave diodes and transistors (English PDF)

Foreword

This document complies with the provisions of GB/T 1.1-2020 "Standardization Work Guidelines Part 1: Structure and Drafting Rules of Standardization Documents".

Drafting.

This document is Part 4 of GB/T 4023.GB/T 4023 has the following parts published.

---Semiconductor Discrete Devices Part 1: Specifications (GB/T 4023.1-2026);

---Semiconductor Devices - Discrete Devices and Integrated Circuits - Part 2: Rectifier Diodes (GB/T 4023-2015);

---Discrete Semiconductor Devices - Part 3: Signal, Switching and Control Diodes (GB/T 4023.3-2026);

This document supersedes GB/T 20516-2006 "Semiconductor Devices - Discrete Devices - Part 4: Microwave Devices" and is consistent with GB/T 20516-Compared to 2006, aside from structural adjustments and editorial changes, the main technical changes are as follows.

a) Added terminology and definitions for microwave diodes (see 3.1); removed "temperature" and "other definitions" (see Part VII of the 2006 edition).

Terms and definitions such as 2.2.1 and 2.2.5 have been revised; "gate-drain breakdown voltage" (see 3.2.3.3) and "output power" (see 3.2.1.1) have been added.

3.2.1.2), Power Gain (3.2.1.3), Noise Figure (see 3.2.1.5), Source Reflectance Factor (see 3.2.1.8), Frequency (See 3.2.1.10, 3.2.1.11, 3.2.1.12), "Gain" (see 3.2.1.13, 3.2.3.5, 3.2.3.6), "Drain Efficiency" (see 3.2.3.8) "Intercept power" (see 3.2.1.14, 3.2.1.15), "Intermodulation distortion" (see 3.2.1.16), "Mismatch" (see 3.2.1.17, 3.2.1.18), Terms and definitions such as 3.2.1.19);

b) The application of varactor diodes has been changed (see 4.1, Section 1.1 of Part II, 2006 edition), and the terms "maximum average forward current" and "maximum" have been removed.

The rated values such as "peak forward current" and "power dissipation" (see Section 1.3.2 of Part II in the 2006 edition) have been removed, along with the removal of "switching time" and "storage".

Electrical properties such as "charge storage or minority carrier lifetime" and "transit time" (see Section 1.3.3 of Part II, 2006 edition), with the positive [unclear] removed.

The methods for voltage and transient thermal impedance testing have been revised, removing the examples of varactor diodes, impedance transformation method, and equal quality factor circle method.

(See Section 1, 4.2 and 4.8-4.11 of Part II in the 2006 edition); The reverse breakdown voltage, forward differential resistance, and cutoff frequency have been added.

The parameters and test methods for capacitance and other parameters are described in sections 4.3.3, 4.3.4, and 4.3.9; a method for measuring total capacitance using a capacitance meter has been added (see section 4.3.1.3).

LCR tester method for measuring series inductance (see 4.3.6.2);

c) Added parameters and test methods for capacitance, reverse current, etc. (see 5.3.1~5.3.8); removed the step diode "reverse recovery time" parameter.

The testing method for "time" (see Section 2.4.2 of Part II in the 2006 edition);

d) Added a low-frequency parameter testing method for mixer diodes and a vector network analyzer method for measuring voltage standing wave ratio (VSWR).

The method for detecting network outages has been added to the French language (see 6.3), while the test method for "rectified current" has been removed (see Section 1, 4.3 of Part III in the 2006 edition).

e) Added content on detector diodes (see Chapter 7);

f) Added test methods for "threshold current", "thermal resistance", and "microwave output power, frequency, and efficiency" of bulk effect diodes (see 8.3.2).

8.3.4, 8.3.5);

g) Added content on PIN diodes (see Chapter 9);

h) Added content on noise diodes (see Chapter 10);

i) The content on avalanche diodes has been removed (see Part IV of the 2006 edition);

j) Added content on bipolar transistors (see Chapter 11);

k) Added "gate current during drain-source short circuit" (see 12.3.2.2) and "gate-drain breakdown voltage" (see 12.3.2.5) to the field-effect transistor.

"Drain efficiency" (see 12.3.3.5), "S-parameters" (see 12.3.3.8), "characteristic frequency" (see 12.3.3.10), "current transfer ratio of 1" "Frequency" (see 12.3.3.11), "Gain" (see 12.3.3.13, 12.3.3.14), "Intermodulation Distortion" (see 12.3.3.15), "Intercept Point" the test method for "input power" (see 12.3.3.16) has been updated; the test method for "channel-to-shell thermal resistance" has been expanded to include Method 2 infrared thermal analysis.

The imaging method (see 12.3.2.6.3) was added; a verification method for field-effect transistors was also added (see 12.4).

This document is modified to adopt IEC 60747-4:2017 "Semiconductor devices - Discrete devices - Part 4: Microwave diodes and transistors".

This document has undergone significant structural adjustments compared to IEC 60747-4:2017.A comparison of the structural numbering changes between the two documents is provided below.

See Appendix A for the table.

This document differs significantly from IEC 60747-4:2017.The relevant clauses are indicated in vertical margins.

Single lines (|) are indicated. A summary of these technical differences and their causes can be found in Appendix B.

The following editorial changes have been made to this document.

---To align with existing standards, the standard title has been changed to "Semiconductor Discrete Devices Part 4: Microwave Diodes and Transistors";

---Appendix A (Informative) "Structure Number Comparison Table" has been added;

---Added Appendix B (Informative) "Technical Differences and Reasons".

Please note that some content in this document may involve patents. The issuing organization of this document assumes no responsibility for identifying patents.

This document was proposed by the Ministry of Industry and Information Technology of the People's Republic of China.

This document is under the jurisdiction of the National Semiconductor Device Standardization Technical Committee (SAC/TC78).

Introduction

Semiconductor discrete devices are common basic products in the electronics industry, serving as the most fundamental units in electronic systems. Their performance and reliability directly affect...

This affects the quality and reliability of engineering projects. GB/T 4023, as a fundamental standard, aims to standardize the parameter system, test methods, and...

The reliability assessment is proposed to consist of nine parts.

---Part 1: Specifications. The purpose is to define the quality of discrete semiconductor devices (excluding optoelectronic devices and discrete device modules).

Guarantee requirements.

---Part 2: Rectifier Diodes. The purpose is to define the terminology, symbolic representation, basic ratings, and characteristics of rectifier diodes.

Product-specific requirements such as testing methods.

---Part 3: Signals, Switches, and Adjustment Diodes. The purpose is to define the terminology and text for signals, switches, and adjustment diodes.

Product-specific requirements such as specifications, basic ratings and characteristics, and test methods.

---Part 4: Microwave Diodes and Transistors. The purpose is to define the terminology, symbolic representation, and basic principles of microwave diodes and transistors.

Product-specific requirements such as ratings, characteristics, and test methods.

---Part 6: Thyristors. The purpose is to define the terminology, symbol, basic ratings and characteristics, and test methods for thyristors.

Specific requirements for products, etc.

---Part 7: Bipolar Transistors. The purpose is to define the terminology, symbolic representation, and usage of bipolar transistors (excluding microwave transistors).

Product-specific requirements, such as basic ratings and characteristics, and test methods.

---Part 8: Field-Effect Transistors. The purpose is to define the terminology, notation, basic ratings, and characteristics of field-effect transistors.

And product-specific requirements such as testing methods.

---Part 9: Insulated Gate Bipolar Transistor (IGB T). The purpose is to define the terminology and textual specifications for the Insulated Gate Bipolar Transistor (IGB T).

Product-specific requirements such as character symbols, basic ratings and characteristics, and test methods.

---Part 15: Insulated Power Semiconductor Devices. The purpose is to define the terminology, symbolic representation, and basic principles of insulated power semiconductor devices.

Product-specific requirements such as ratings, characteristics, and test methods.

GB/T 4023 (all parts) adopts a combination of independent formulation and adoption of relevant standards for discrete devices in the IEC 60747 series.

This system aims to meet the domestic demand for discrete semiconductor devices in terms of parameter systems, testing methods, and reliability evaluation.

Aligning with international standards. By formulating this document, a basis and important support are provided for the research, development, production, and testing of discrete semiconductor devices.

Semiconductor discrete devices Part 4: Microwave Diodes and Transistors

1 Scope

This document specifies the terminology and definitions, basic ratings and characteristics, test methods, and verification methods for microwave diodes and transistors.

Specific requirements.

This document applies to the following types of microwave diodes and transistors.

---Varactor diodes (used in electronic tuning, frequency converters, harmonic multipliers, phase shifters, etc.);

---Step diode (used in comb generators, frequency multipliers, etc.);

--- Mixer diode (used in mixers, etc.);

---Detector diode (used in detectors, etc.);

---Bulk effect diodes (used in oscillators, amplifiers, etc.);

---PIN diodes (used in switches, limiters, phase shifters, attenuators, etc.);

---Noise diodes (used in solid-state noise sources, etc.);

---Bipolar transistor (used in amplifiers and oscillators);

---Field-effect transistors (used in amplifiers and oscillators).

2 Normative references

The contents of the following documents, through normative references within the text, constitute essential provisions of this document. Dated citations are not included.

For references to documents, only the version corresponding to that date applies to this document; for undated references, the latest version (including all amendments) applies.

This document.

GB/T 4587-2023 Semiconductor devices - Discrete devices - Part 7: Bipolar transistors (IEC 60747-7:2019, MOD) GB/T 17573-2026 General Rules for Semiconductor Devices (IEC 60747-1:2006, IDT) Discretedevices-Part 8: Field-effecttransistors) Note. GB/T 4586-1994 Semiconductor Devices - Discrete Devices - Part 8: Field-Effect Transistors (IEC 60747-8:1984, IDT)

3 Terms and Definitions

The terms and definitions defined in GB/T 17573-2026, as well as the following terms and definitions, apply to this document.