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GB/T 20516-2006Semiconductor devices -- Discrete devices -- Part 4: Microwave devices (English PDF)

半导体器件分立器件第4部分：微波器件

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Issued by

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

Level / Type

National · Recommended

Issue date

October 10, 2006

Implementation date

February 1, 2007

Scope

GB/T 20516-2006 is the English-translated version of 半导体器件分立器件第4部分：微波器件.

GB/T 20516-2006 — Semiconductor devices -- Discrete devices -- Part 4: Microwave devices

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Document preview — GB/T 20516-2006

National Standard of the People's Republic of China

ICS: 31.080.01
Classification: L 40

Issued by: General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

What this standard covers1
Document data2

What this standard covers

This standard specifies the following categories of discrete criteria: varactor, step and fast switching diode Schottky diode (for tuning, or harmonic frequency upconverter, switches, limiters, phase device, parametric amplifier, etc.) mixer diode and detector diode Avalanche Diode (for harmonic generators, amplifiers, etc.) bulk diode (for oscillators, amplifiers, etc.) bipolar transistors (used in amplifiers, oscillators, etc.) field effect transistor (for amplifiers, oscillators, etc.)

Document data

International classification (ICS): 31.080.01.

Chinese classification (CCS): L40.

Estimated length of the Chinese original: 74,710 words.

Adopted international standard: IEC 60747-4-2001, IDT.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 49 pages — is available in the English PDF.

Referenced standards

Cited by

GB/T 20870.4-2024Semiconductor devices - Part 16-4: Microwave integrated circuits - Switches

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