GB/T 30869-2014Test method for thickness and total thickness variation of silicon wafers for solar cell (English PDF)
太阳能电池用硅片厚度及总厚度变化测试方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
July 24, 2014
Implementation date
February 1, 2015
Scope
GB/T 30869-2014 is the English-translated version of 太阳能电池用硅片厚度及总厚度变化测试方法.
GB/T 30869-2014 is the Chinese standard "Test method for thickness and total thickness variation of silicon wafers for solar cell". Its scope clause reads: This standard specifies the discrete scanning and measuring solar cell wafers (hereinafter referred to as wafer) changes in thickness and total thickness.
This standard applies to GB T 26071 GB/T 29055 predetermined size to measure the thickness and total thickness variation of /, silicon, division Measurement method is suitable for contact and non-contact measurement, scanning measurement method is only applicable to non-contact measurement.
Measuring instruments permit Under the circumstances, the present standard can also be used to measure the thickness and other specifications total wafer thickness variations. Its clauses include method summary.
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Document preview — GB/T 30869-2014
National Standard of the People's Republic of China
- ICS
- 77.040
- Classification
- H 21
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- 1 Scope
- 2 Normative references
- 3 Method summary
- 3.1 discrete point measurement
- 3.2 Scanning measurement
1 Scope
This standard specifies the discrete scanning and measuring solar cell wafers (hereinafter referred to as wafer) changes in thickness and total thickness.
This standard applies to GB T 26071 GB/T 29055 predetermined size to measure the thickness and total thickness variation of /, silicon, division
Measurement method is suitable for contact and non-contact measurement, scanning measurement method is only applicable to non-contact measurement. Measuring instruments permit
Under the circumstances, the present standard can also be used to measure the thickness and other specifications total wafer thickness variations.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 26071 monocrystalline silicon solar cells with a cutting disc
GB/T 29055 multicrystalline silicon wafers for solar cells
3 Method summary
3.1 discrete point measurement
On a silicon wafer and diagonal intersection diagonal from point symmetrical positions on both sides of four 15mm measuring wafer thickness (see Figure 1). Silicon wafer
Center point thickness as the nominal thickness of the silicon wafer. The difference between the total thickness of 5 thickness measurements of the maximum and minimum thicknesses of the wafer is called
Variety.
Figure 1 discrete point measurement point position measurement
3.2 Scanning measurement
Placed on a silicon chip platform, in the center of wafer thickness measurements, measuring the value of the nominal thickness of the silicon wafer, and then from a point of 1 to 7 […]
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Referenced standards
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