GB/T 29056-2025Determination of impurity content in trichlorosilane for silicon epitaxy — Inductively coupled plasma mass spectrometry (English PDF)

3 Terms and definitions

4 Principle of the method

5 Interfering factors

6 Test conditions

7 Reagents and materials

8 Apparatus and equipment

9 Samples

10 Test procedure

11 Precision

12 Test report

Foreword

This document is drafted in accordance with the rules given in GB/T 1.1-2020, Directives for standardization - Part 1: Rules for the structure and drafting of standardizing documents.

This document replaces GB/T 29056-2012, Chemical analysis methods of trichlorosilane for silicon epitaxy - Determination of boron, aluminium, phosphorus, vanadium, chromium, manganese, iron, cobalt, nickel, copper, molybdenum, arsenic and antimony content - Inductively coupled plasma mass spectrometry. Compared with GB/T 29056-2012, apart from structural adjustments and editorial changes, the main technical changes are as follows:

a) the determination of lithium, sodium and other elements has been added, and the measuring range has been changed (see Clause 1; Clause 1 of the 2012 edition);

b) the principle of the method has been changed (see Clause 4; Clause 2 of the 2012 edition);

c) interference factors have been added (see Clause 5);

d) test conditions have been added (see Clause 6);

e) the reagents and materials have been changed (see Clause 7; Clause 3 of the 2012 edition);

f) the instrument has been changed (see 8.1; Clause 4 of the 2012 edition);

g) requirements for the analytical balance, electric hot plate, vessels, etc. have been added (see 8.2 to 8.8);

h) requirements for sampling have been added (see Clause 9);

i) the safety measures in the analytical procedure have been deleted (see 5.1 of the 2012 edition);

j) instrument preparation has been added (see 10.1);

k) the test portion, parallel tests, preparation of standard solutions and measurement steps have been changed (see 10.2, 10.3, 10.5 and 10.7; 5.2, 5.3, 5.5 and 5.6 of the 2012 edition);

l) the precision requirements have been changed (see Clause 11; Clause 7 of the 2012 edition);

m) quality assurance and control has been deleted (see Clause 8 of the 2012 edition);

n) the test report has been changed (see Clause 12; Clause 9 of the 2012 edition).

Attention is drawn to the possibility that some of the elements of this document may be the subject of patent rights. The issuing body of this document shall not be held responsible for identifying any or all such patent rights.

This document was jointly proposed by and is under the jurisdiction of the National Technical Committee on Semiconductor Equipment and Materials of Standardization Administration of China (SAC/TC 203) and its Subcommittee on Materials (SAC/TC 203/SC 2).

Drafting organisations of this document: Luoyang China Silicon High-tech Co., Ltd., Jiangsu Xinhua Semiconductor Technology Co., Ltd., Sichuan Yongxiang New Energy Co., Ltd., Jiangsu Zhongneng Polysilicon Technology Development Co., Ltd., Asia Silicon (Qinghai) Co., Ltd., Qinghai CSG New Energy Technology Co., Ltd., Qinghai Lihao Clean Energy Co., Ltd., Xinjiang Xinte New Energy Materials Testing Center Co., Ltd., Hubei Jianghan New Materials Co., Ltd.

Main drafters of this document: Wan Ye, Guo Shuhu, Liu Jianhua, Cao Junying, Zhao Peizhi, Wu Zuomu, Song Dan, Wang Chunming, Wei Dongliang, Li Qiang, Ran Yi, Kang Junqin, Gan Jun, Tang Yan.

This document was first issued in 2012; this is the first revision.