GB/T 17170-2015Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy (English PDF)
半绝缘砷化镓单晶深施主EL2浓度红外吸收测试方法
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
December 10, 2015
Implementation date
July 1, 2016
Scope
GB/T 17170-2015 is the English-translated version of 半绝缘砷化镓单晶深施主EL2浓度红外吸收测试方法.
GB/T 17170-2015 is the Chinese standard "Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy".
Its scope clause reads: This standard specifies the semi-insulating GaAs single crystal deep donor EL2 concentration infrared absorption test methods. This standard applies to electrical resistivity greater than 106ohm · cm undoped and carbon doped semi-insulating GaAs single crystal deep donor EL2 concentration Determination.
This standard does not apply to the determination of chromium-doped semi-insulating GaAs single crystal deep donor EL2 concentration. Its clauses include terms and definitions; method summary; disturbances; instruments.
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Document preview — GB/T 17170-2015
National Standard of the People's Republic of China
- ICS
- 77.040
- Classification
- H 17
- Replacing
- GB/T 17170-1997
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- 1 Scope
- 2 Normative references
- 3 Terms and Definitions
- 4 Method summary
- 5 disturbances
- 6 Instruments
1 Scope
This standard specifies the semi-insulating GaAs single crystal deep donor EL2 concentration infrared absorption test methods.
This standard applies to electrical resistivity greater than 106ohm · cm undoped and carbon doped semi-insulating GaAs single crystal deep donor EL2 concentration
Determination.
This standard does not apply to the determination of chromium-doped semi-insulating GaAs single crystal deep donor EL2 concentration.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 14264 semiconductor material terms
3 Terms and Definitions
GB/T 14264 and defined by the following terms and definitions apply to this document.
3.1 EL2 concentration
EL2 (a GaAs single crystal intrinsic defects) concentration in the single crystal of gallium arsenide.
4 Method summary
Semi-insulating GaAs single crystal deep donor EL2 infrared absorption coefficient alpha EL2 concentration and a corresponding relationship, measuring 1.0972µm
Infrared absorption coefficient by the empirical calibration formula can be calculated at the EL2 concentration. Infrared absorption coefficient alpha EL2 concentration and see the relationship between
Appendix A.
5 disturbances
5.1
stray light reaching the detector will result in deviation of the test results EL2 concentration.
Testing area of 52,000 test sample should be larger than the diaphragm aperture, or it may lead to erroneous test results.
6 Instruments
6.1 Spectrophotometer
0.8µm ~ 2.5µm can scan range and the absorbance of the zero line fluctuations should not exceed -0.002 to 0.002.
6.2 micrometer
accuracy of 10µm.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
Similar standards
Editions of GB/T 17170
| Edition | Title | Revision | Status |
|---|---|---|---|
| GB/T 17170-2015 | Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy | current edition | Current |
| GB/T 17170-1997 | Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy | previous edition | Superseded |
This page sells the current edition, GB/T 17170-2015. Earlier editions are listed for reference only.
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