GB/T 17170-1997Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method (English PDF)
非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法
GB/T 17170 | Evolution and historical versions
| Std ID | Title | Status |
|---|---|---|
| GB/T 17170-2015 | Test method for the EL2 deep donor concentration in semi-insulating gallium arsenide single crystals by infrared absorption spectroscopy | Valid |
| GB/T 17170-1997 | Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method | Obsolete |
GB/T 17170-1997 is obsolete. It has been replaced by GB/T 17170-2015. This page sells the obsolete edition, for projects and contracts that still cite it.
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Issued by
State Bureau of Technical Supervision
Level / Type
National · Recommended
Issue date
December 22, 1997
Implementation date
August 1, 1998
Scope
GB/T 17170-1997 is the English-translated version of 非掺杂半绝缘砷化镓单晶深能级EL2浓度红外吸收测试方法.
GB/T 17170-1997 is the Chinese national standard "Test method for deep level EL2 concentration of undoped semi-insulating monocrystal gallium arsenide by measurement infrared absorption method".
It was issued on December 22, 1997 by the State Bureau of Technical Supervision, and took effect on August 1, 1998. It is obsolete: it has been replaced by GB/T 17170-2015.
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Document preview — GB/T 17170-1997
National Standard of the People's Republic of China
Issued by: State Bureau of Technical Supervision
Contents
- Document data
1 Document data
Sector: National standard (Recommended).
Issuing body: State Bureau of Technical Supervision.
Date of issue: 1997-12-22.
Date of implementation: 1998-08-01.
Status: obsolete, replaced by GB/T 17170-2015.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — all pages — is available in the English PDF.
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