SJ/T 9014.8.2-2018Semiconductor devices. Discrete devices - Part 8-2: Blank detail specification for super junction metal-oxide-semiconductor field-effect transistors (English PDF)
半导体器件 分立器件 第8-2部分:超结金属氧化物半导体场效应晶体管空白详细规范
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
April 30, 2018
Implementation date
July 1, 2018
Scope
SJ/T 9014.8.2-2018 is the English-translated version of 半导体器件 分立器件 第8-2部分:超结金属氧化物半导体场效应晶体管空白详细规范.
SJ/T 9014.8.2-2018 — This standard specifies the writing requirements and writing format for the detailed specification of super junction metal oxide semiconductor field effect transistors.
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Document preview — SJ/T 9014.8.2-2018
National Standard of the People's Republic of China
- Classification
- L 44
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the writing requirements and writing format for the detailed specification of super junction metal oxide semiconductor field effect transistors.
Document data
Chinese classification (CCS): L44.
Estimated length of the Chinese original: 17,157 words.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 11 pages — is available in the English PDF.
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