SJ/T 2214-2015Measuring methods for semiconductor photodiode and phototransistor (English PDF)
半导体光电二极管和光电晶体管测试方法
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
April 30, 2015
Implementation date
October 1, 2015
Scope
SJ/T 2214-2015 is the English-translated version of 半导体光电二极管和光电晶体管测试方法.
SJ/T 2214-2015 — This Standard specifies the test method for a semiconductor photodiode and a phototransistor (hereinafter referred to as "devices") of optical parameters.
This Standard applies to testing semiconductor photodiode and phototransistor photoelectric parameters.
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Document preview — SJ/T 2214-2015
National Standard of the People's Republic of China
- ICS
- 31.08
- Classification
- L 54
- Replacing
- SJ 2214.1-1982; SJ 2214.2-1982; SJ 2214.3-1982; SJ 2214.4-1982; SJ 2214.5-1982; SJ 2214.6-1982; SJ 2214.7-1982; SJ 2214.8-1982; SJ 2214.9-1982; SJ 2214.10-1982
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This Standard specifies the test method for a semiconductor photodiode and a phototransistor (hereinafter referred to as "devices") of optical parameters. This Standard applies to testing semiconductor photodiode and phototransistor photoelectric parameters. This Standard is not applicable PIN, avalanche photodiode testing.
Document data
International classification (ICS): 31.08.
Chinese classification (CCS): L54.
Estimated length of the Chinese original: 25,295 words.
Supersedes the earlier edition SJ 2214.1-1982; SJ 2214.2-1982; SJ 2214.3-1982; SJ 2214.4-1982; SJ 2214.5-1982; SJ 2214.6-1982; SJ 2214.7-1982; SJ 2214.8-1982; SJ 2214.9-1982; SJ 2214.10-1982.
Standards quoted by this document
GB/T 2421.1-2008; GB/T 11499-2001
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 17 pages — is available in the English PDF.
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