SJ/T 1480-2016Discrete semiconductor devices 3CG130 high frequency low power silicon PNP transistor detailed specification (English PDF)
半导体分立器件 3CG130型硅PNP高频小功率晶体管详细规范
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
April 5, 2016
Implementation date
September 1, 2016
Scope
SJ/T 1480-2016 is the English-translated version of 半导体分立器件 3CG130型硅PNP高频小功率晶体管详细规范.
SJ/T 1480-2016 — This standard specifies the external dimensions, maximum ratings and electrical characteristics, test conditions and inspection requirements for 3CG130 silicon PNP high frequency low power transistor devices.
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Document preview — SJ/T 1480-2016
National Standard of the People's Republic of China
- Classification
- L 42
- Replacing
- SJ 1480-1979
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the external dimensions, maximum ratings and electrical characteristics, test conditions and inspection requirements for 3CG130 silicon PNP high frequency low power transistor devices.
Document data
Chinese classification (CCS): L42.
Estimated length of the Chinese original: 11,193 words.
Supersedes the earlier edition SJ 1480-1979.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.
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