SJ/T 11976-2025Neutron transmutation doped float zone silicon single crystal for Insulate GateBipolar Transistors (IGBT) (English PDF)
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
May 9, 2025
Implementation date
August 1, 2025
Scope
SJ/T 11976-2025 (Neutron transmutation doped float zone silicon single crystal for Insulate GateBipolar Transistors (IGBT)) is available as an English-translated PDF.
SJ/T 11976-2025 — This standard specifies the terminology and definitions, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and quality certificates for neutron transmutation doped zone-melting silicon single crystals (hereinafter referred to as NTD silicon single crystals) used in IGBTs.
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Document preview — SJ/T 11976-2025
National Standard of the People's Republic of China
- ICS
- 31.03
- Classification
- L 90
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the terminology and definitions, technical requirements, test methods, inspection rules, marking, packaging, transportation, storage, and quality certificates for neutron transmutation doped zone-melting silicon single crystals (hereinafter referred to as NTD silicon single crystals) used in IGBTs. This document applies to NTD silicon single crystals used in IGBT products.
Document data
International classification (ICS): 31.03.
Chinese classification (CCS): L90.
Estimated length of the Chinese original: 10,122 words.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.
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