SJ/T 11975-2025Specification for press-fit insulated gate bipolar transistors (IGB Ts) for power systems (English PDF)
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
May 9, 2025
Implementation date
August 1, 2025
Scope
SJ/T 11975-2025 (Specification for press-fit insulated gate bipolar transistors (IGB Ts) for power systems) is available as an English-translated PDF.
SJ/T 11975-2025 — This standard specifies the terms and definitions, models, dimensions, ratings, characteristic values, inspection rules, marking, packaging, transportation, and storage requirements for press-fit insulated gate bipolar transistors (IGBTs) for power systems.
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Document preview — SJ/T 11975-2025
National Standard of the People's Republic of China
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the terms and definitions, models, dimensions, ratings, characteristic values, inspection rules, marking, packaging, transportation, and storage requirements for press-fit insulated gate bipolar transistors (IGBTs) for power systems. This document applies to press-fit IGBTs for power systems, with or without diodes.
Document data
Estimated length of the Chinese original: 23,280 words.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
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