SJ/T 11824-2022Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Equivalent Capacitance and Voltage Change Rate Test Method (English PDF)
金属氧化物半导体场效应晶体管(MOSFET)等效电容和电压变化率测试方法
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
September 30, 2022
Implementation date
January 1, 2023
Scope
SJ/T 11824-2022 is the English-translated version of 金属氧化物半导体场效应晶体管(MOSFET)等效电容和电压变化率测试方法.
SJ/T 11824-2022 — This standard specifies the test methods for the two parameters of metal-oxide semiconductor field effect transistor (MOSFET) equivalent capacitance and voltage change rate.
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Document preview — SJ/T 11824-2022
National Standard of the People's Republic of China
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the test methods for the two parameters of metal-oxide semiconductor field effect transistor (MOSFET) equivalent capacitance and voltage change rate.
Document data
Estimated length of the Chinese original: 10,185 words.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.
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