SJ/T 11503-2015Test methods for measuring surface roughness of polished monocrystalline silicon carbide wafers (English PDF)
碳化硅单晶抛光片表面粗糙度的测试方法
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
April 30, 2015
Implementation date
October 1, 2015
Scope
SJ/T 11503-2015 is the English-translated version of 碳化硅单晶抛光片表面粗糙度的测试方法.
SJ/T 11503-2015 — This Standard specifies the test silicon carbide single crystal polished surface roughness comprising surface profiler and atomic force microscopy.
This Standard applies to silicon carbide single product polished surface roughness testing.
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Document preview — SJ/T 11503-2015
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 83
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This Standard specifies the test silicon carbide single crystal polished surface roughness comprising surface profiler and atomic force microscopy. This Standard applies to silicon carbide single product polished surface roughness testing. Among them, the atomic force microscope method applies only after chemical mechanical polishing or optically polished and the surface roughness of the ups and downs in a few tenths of a micron wide silicon carbide single crystal polished.
Document data
International classification (ICS): 29.045.
Chinese classification (CCS): H83.
Estimated length of the Chinese original: 12,144 words.
Standards quoted by this document
GB/T 14264; GB/T 25915.1-2010
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 8 pages — is available in the English PDF.
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