SJ/T 11497-2015Test method for thermal stability testing of gallium arsenide wafers (English PDF)
砷化镓晶片热稳定性的试验方法
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
April 30, 2015
Implementation date
October 1, 2015
Scope
SJ/T 11497-2015 is the English-translated version of 砷化镓晶片热稳定性的试验方法.
SJ/T 11497-2015 — This Standard specifies the semi-insulating gallium arsenide (GaAs) wafer test methods for thermal stability.
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Document preview — SJ/T 11497-2015
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 83
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This Standard specifies the semi-insulating gallium arsenide (GaAs) wafer test methods for thermal stability. This Standard applies to electrical resistivity at 10 ^ 4� � cm ~ 10 ^ 9� � cm range of semi-insulating gallium arsenide single crystal thermal stability test material.
Document data
International classification (ICS): 29.045.
Chinese classification (CCS): H83.
Estimated length of the Chinese original: 8,859 words.
Standards quoted by this document
SJ/T 11488
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 6 pages — is available in the English PDF.
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