SJ/T 11494-2015Test methods for photoluminescence analysis of single crystal silicon for III-V impurities (English PDF)
硅单晶中III-V族杂质的光致发光测试方法
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
April 30, 2015
Implementation date
October 1, 2015
Scope
SJ/T 11494-2015 is the English-translated version of 硅单晶中III-V族杂质的光致发光测试方法.
SJ/T 11494-2015 — This Standard specifies the test methods photoluminescent silicon single crystal boron and phosphorus impurities. This Standard applies to low dislocation (2
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Document preview — SJ/T 11494-2015
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 82
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This Standard specifies the test methods photoluminescent silicon single crystal boron and phosphorus impurities. This Standard applies to low dislocation (2
Document data
International classification (ICS): 29.045.
Chinese classification (CCS): H82.
Estimated length of the Chinese original: 12,192 words.
Standards quoted by this document
GB/T 13389; GB/T 24581
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 8 pages — is available in the English PDF.
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