SJ/T 11225-2000Detail specification for electronic components Type 3DA504 S band silicon pulse power transistor (English PDF)

SJ/T 11225-2000 is the English-translated version of 电子元器件详细规范 3DA504型S波段硅脉冲功率晶体.

SJ/T 11225-2000 — This standard applies to 3DA504 type S-band pulse power silicon transistors, which is in accordance with GB/T 7576-1998 "Semiconductor devices Discrete devices Part 7 bipolar transistors fourth frequency amplification Case rated bipolar transistors for Blank detail specification "standard setting, in line with GB/T 4589.

1-1989" Semiconductor devices Discrete devices and integrated circuits norms "and GB/T 12560-1999" Semiconductor devices Discrete devices specification "Class �� requirements.

This specification referenced standards GB/T 4587-1994 "Discrete semiconductor devices and integrated circuits Part 7 bipolar transistors", GB/T 4589.

1-1989 "Semiconductor devices Discrete devices and integrated circuits norms", GB/T 4937 -1995 "Semiconductor devices Mechanical and climatic test methods" and GJB 128A-97 "Test Method for discrete semiconductor devices.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.

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