SJ 3244.3-1989Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide (English PDF)
砷化镓、磷化铟单晶晶向的测量方法
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Mandatory
Issue date
March 20, 1989
Implementation date
March 25, 1989
Scope
SJ 3244.3-1989 is the English-translated version of 砷化镓、磷化铟单晶晶向的测量方法.
SJ 3244.3-1989 is the Chinese standard "Methods of measurement for crystal-orientation of single crystal of Gallium arsenide and Indium phosphide". Issued on 3/20/1989, in force from 3/25/1989.
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Document preview — SJ 3244.3-1989
National Standard of the People's Republic of China
- Classification
- H83;L90
Contents
- Document data
1 Document data
Sector: Electronics Industry Standard.
Date of issue: 3/20/1989.
Date of implementation: 3/25/1989.
Chinese Standard Classification: H83;L90.
Length: about 4,462 characters in the Chinese original.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 8 pages — is available in the English PDF.
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Related Standards
SJ 3244.4-1989 — Methods of measurement for profile distribution of carrier concentration of Gallium arsenide and Indium phosphide materials--Electrochemical voltage capacitance method
SJ 3244.2-1989 — Methods of measurement for crystal lattice mismatch between substrate of Gallium arsenide and Indium phosphide and extended layer of heterojunction
SJ 3244.5-1989 — Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias
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SJ 3244.3-1989
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