SJ 3244.5-1989Methods of measurement for compensation degree of Gallium arsenide and Indium phosphide materias (English PDF)
砷化镓和磷化铟材料补偿度的测试方法
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Issued by
Ministry of Industry and Information Technology of PRC
Level / Type
National · Mandatory
Issue date
March 20, 1989
Implementation date
March 25, 1989
Scope
SJ 3244.5-1989 is the English-translated version of 砷化镓和磷化铟材料补偿度的测试方法.
SJ 3244.5-1989 — This standard specifies the gallium arsenide and indium phosphide material to determine the compensation of the measurement principle, the equipment, the test sample preparation and analysis.
This standard applies to the n-type, P-type GaAs and InP epitaxial layer and the high resistance of the substrate, the carrier concentration in the 1 �� 10 ^ 12 ~ 5 �� 10 ^ 15cm ^ -3 semiconductor material scope of test and analysis of compensation degree.
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Document preview — SJ 3244.5-1989
National Standard of the People's Republic of China
- Classification
- H 83;L90
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the gallium arsenide and indium phosphide material to determine the compensation of the measurement principle, the equipment, the test sample preparation and analysis. This standard applies to the n-type, P-type GaAs and InP epitaxial layer and the high resistance of the substrate, the carrier concentration in the 1 �� 10 ^ 12 ~ 5 �� 10 ^ 15cm ^ -3 semiconductor material scope of test and analysis of compensation degree. In principle also applies to the measurement and analysis of other III-V compound material compensation degree.
Document data
Chinese classification (CCS): H83;L90.
Estimated length of the Chinese original: 7,799 words.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 5 pages — is available in the English PDF.
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