SJ 1480-1979Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG130 (English PDF)
3CG130型PNP硅外延平面高频小功率三极管
SJ 1480 | Evolution and historical versions
| Std ID | Title | Status |
|---|---|---|
| SJ/T 1480-2016 | Semiconductor discrete devices Detail specification for type 3CG130 high frequency low power PNP silicon transistor | Valid |
| SJ 1480-1979 | Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG130 | Obsolete |
SJ 1480-1979 is obsolete. It has been replaced by SJ/T 1480-2016. This page sells the obsolete edition, for projects and contracts that still cite it.
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Level / Type
National · Mandatory
Issue date
September 11, 1979
Implementation date
June 1, 1980
Scope
SJ 1480-1979 is the English-translated version of 3CG130型PNP硅外延平面高频小功率三极管.
SJ 1480-1979 is the Chinese industry standard "Detail specification for silicon PNP epitaxial planar high frequency low power transistors,Type 3CG130". It was issued on September 11, 1979, and took effect on June 1, 1980. It is obsolete: it has been replaced by SJ/T 1480-2016.
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Document preview — SJ 1480-1979
Contents
- Document data
1 Document data
Sector: Electronics (industry standard).
Date of issue: 1979-09-11.
Date of implementation: 1980-06-01.
Status: obsolete, replaced by SJ/T 1480-2016.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — all pages — is available in the English PDF.
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SJ 1480-1979
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