JB/T 8951.5-2025Insulated gate bipolar transistor (IGBT) - Part 5: Three-phase bridge module (English PDF)

JB/T 8951.5-2025 (Insulated gate bipolar transistor (IGBT) - Part 5: Three-phase bridge module) is available as an English-translated PDF.

JB/T 8951.5-2025 is the Chinese standard "Insulated gate bipolar transistor (IGBT) - Part 5: Three-phase bridge module".

This standard specifies the model, dimensions, ratings, characteristics, inspection rules, quality assessment categories, marking, packaging, storage, and ordering forms for three-phase bridge modules of insulated gate bipolar transistors (IGBTs).

This standard applies to the manufacturing of industrial-grade general-purpose IGBT three-phase bridge modules with a collector DC current not exceeding 450A and a collector-emitter voltage not exceeding 1700V.

It was issued by Ministry of Industry and Information Technology. Issued on 2025-07-02, in force from 2026-02-01.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

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