JB/T 8951.1-2025Insulated gate bipolar transistor (IGBT) - Part 1: Single Transistor (English PDF)
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
July 2, 2025
Implementation date
February 1, 2026
Scope
JB/T 8951.1-2025 (Insulated gate bipolar transistor (IGBT) - Part 1: Single Transistor) is available as an English-translated PDF.
JB/T 8951.1-2025 — Insulated gate bipolar transistor (IGBT) - Part 1: Single Transistor
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Document preview — JB/T 8951.1-2025
National Standard of the People's Republic of China
- ICS
- 31.080.30
- Classification
- K 46
- Replacing
- JB/T 8951.1-1999
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the model, dimensions, ratings, characteristics, inspection rules, quality assessment category, marking, packaging, storage, and ordering form for single-phase IGBTs. This standard applies to the manufacture of single-phase IGBTs with a collector DC current not exceeding 75A and a collector-emitter voltage not exceeding 1200V.
Document data
International classification (ICS): 31.080.30.
Chinese classification (CCS): K46.
Supersedes the earlier edition JB/T 8951.1-1999.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — all pages — is available in the English PDF.
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Related Standards
JB/T 8951.1-1999 — Insulated gate bipolar transistors
JB/T 8951.2-1999 — Insulated gate bipolar transistor modules - Arms and pairs of arms
JB/T 8951.2-2025 — Insulated gate bipolar transistor (IGBT) - Part 2: Arm Module
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JB/T 8951.1-2025
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