JB/T 8951.2-2025Insulated gate bipolar transistor (IGBT) - Part 2: Arm Module (English PDF)
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
July 2, 2025
Implementation date
February 1, 2026
Scope
JB/T 8951.2-2025 (Insulated gate bipolar transistor (IGBT) - Part 2: Arm Module) is available as an English-translated PDF.
JB/T 8951.2-2025 — This standard specifies the model, dimensions, ratings, characteristics, inspection rules, quality assessment categories, marking, packaging, storage, and order forms for insulated gate bipolar transistor (IGBT) arm modules.
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Document preview — JB/T 8951.2-2025
National Standard of the People's Republic of China
- ICS
- 31.080.30
- Classification
- K 46
- Replacing
- JB/T 8951.2-1999
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the model, dimensions, ratings, characteristics, inspection rules, quality assessment categories, marking, packaging, storage, and order forms for insulated gate bipolar transistor (IGBT) arm modules. This standard applies to the manufacture of industrial-grade general-purpose IGBT arm modules with a collector DC current not exceeding 1200A and a collector-emitter voltage not exceeding 1700V.
Document data
International classification (ICS): 31.080.30.
Chinese classification (CCS): K46.
Supersedes the earlier edition JB/T 8951.2-1999.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — all pages — is available in the English PDF.
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Related Standards
JB/T 8951.1-2025 — Insulated gate bipolar transistor (IGBT) - Part 1: Single Transistor
JB/T 8951.1-1999 — Insulated gate bipolar transistors
JB/T 8951.2-1999 — Insulated gate bipolar transistor modules - Arms and pairs of arms
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JB/T 8951.2-2025
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