JB/T 8951.3-2025Insulated gate bipolar transistor (IGBT) - Part 3: Arm Pair Module (English PDF)
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Issued by
Ministry of Industry and Information Technology
Level / Type
Industry · Recommended
Issue date
July 2, 2025
Implementation date
February 1, 2026
Scope
JB/T 8951.3-2025 (Insulated gate bipolar transistor (IGBT) - Part 3: Arm Pair Module) is available as an English-translated PDF.
JB/T 8951.3-2025 is the Chinese standard "Insulated gate bipolar transistor (IGBT) - Part 3: Arm Pair Module". This standard specifies the requirements for the insulated gate bipolar transistor (IGBT) arm modules.
This standard specifies the model, dimensions, ratings, characteristics, inspection rules, quality assessment category, marking, packaging, storage, and ordering form for industrial-grade general-purpose IGBT arm-pair modules with a collector DC current not exceeding 1200A and a collector-emitter voltage not exceeding 1700V.
It was issued by Ministry of Industry and Information Technology. Issued on 2025-07-02, in force from 2026-02-01.
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Document preview — JB/T 8951.3-2025
National Standard of the People's Republic of China
- ICS
- 31.080.30
- Classification
- K46
Issued by: Ministry of Industry and Information Technology
Contents
- Document data
- Standards quoted by this standard
1 Document data
Sector: Mechanical & Machinery Industry Standard (Recommended).
Issuing body: Ministry of Industry and Information Technology.
Date of issue: 2025-07-02.
Date of implementation: 2026-02-01.
Chinese Standard Classification: K46.
ICS: 31.080.30.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
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Related Standards
JB/T 8951.1-2025 — Insulated gate bipolar transistor (IGBT) - Part 1: Single Transistor
JB/T 8951.1-1999 — Insulated gate bipolar transistors
JB/T 8951.2-1999 — Insulated gate bipolar transistor modules - Arms and pairs of arms
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JB/T 8951.3-2025
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