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GB/T 6495.4-1996Procedures for temperature and irradiance corrections to measured I-Vcharacteristics of crystalline silicon photovoltaic devices (English PDF)

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Issued by

State Bureau of Technical Supervision

Level / Type

National · Recommended

Issue date

July 9, 1996

Implementation date

January 1, 1997

Scope

GB/T 6495.4-1996 (Procedures for temperature and irradiance corrections to measured I-Vcharacteristics of crystalline silicon photovoltaic devices) is available as an English-translated PDF.

GB/T 6495.4-1996 — This standard specifies the temperature and irradiance corrections to measured IV characteristics of crystalline silicon photovoltaic devices, including the determination of the temperature coefficient of the internal series resistance and the line correction factor.

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Document preview — GB/T 6495.4-1996

National Standard of the People's Republic of China

ICS: 29.220.99
Classification: K 83
Replacing: GB 6495-1986; GB 6493-1986

Issued by: State Bureau of Technical Supervision

What this standard covers1
Document data2

What this standard covers

This standard specifies the temperature and irradiance corrections to measured IV characteristics of crystalline silicon photovoltaic devices, including the determination of the temperature coefficient of the internal series resistance and the line correction factor. These methods can be applied in the test used in the � 30% range of the auxiliary illumination.

Document data

International classification (ICS): 29.220.99.

Chinese classification (CCS): K83.

Estimated length of the Chinese original: 9,972 words.

Adopted international standard: IEC 60891-1987, IDT.

Supersedes the earlier edition GB 6495-1986; GB 6493-1986.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.

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