GB/T 47562-2026Micro-electromechanical systems (MEMS) technology - MEMS silicon piezoresistive pressure and temperature composite sensor chips (English PDF)

5.1 Measurement Range

5.1.1 Pressure Measurement Range Unless otherwise specified, the pressure measurement range of the sensor chip should preferably be selected from the following numerical systems. ±1.0×10^n, ±1.6×10^n, ±2.0× 10n, ±2.5×10n, ±3.0×10n, ±4.0×10n, ±5.0×10n, ±6.0×10n, ±8.0×10n. Where n is an integer. The units for the measurement range can be. Pa, hPa, kPa, MPa.

5.1.2 Temperature Measurement Range Unless otherwise specified, the lower limit of the temperature measurement range of a PN junction temperature sensor chip should preferably be selected from the following number system. -55 °C, -45°C, -40°C, -30°C, -20°C, -10°C, 0°C. Unless otherwise specified, the upper limit of the temperature measurement range of a PN junction temperature sensor chip should preferably be selected from the following numerical series. 50°C, 60°C, 70°C, 85°C, 100°C, 125°C, 150°C. Unless otherwise specified, the lower limit of the temperature measurement range of a resistance temperature sensor chip should preferably be selected from the following numerical series. -55 °C, -45°C, -40°C, -30°C, -20°C, -10°C, 0°C. Unless otherwise specified, the upper limit of the temperature measurement range of a resistance temperature sensor chip should preferably be selected from the following numerical series. 50°C, 60°C, 70°C, 85°C, 100°C, 125°C, 150°C, 175°C,.200°C, 250°C.

5.2 Operating Temperature Range Unless otherwise specified, the lower limit of the operating temperature range should be. -55°C, -45°C, -40°C, -30°C, -20°C, -10°C. 0°C. Unless otherwise specified, the upper limit of the operating temperature range should be. 50°C, 60°C, 70°C, 85°C, 100°C, 125°C, 150°C. 175°C,.200°C, 250°C.

5.3 Compensation Temperature Range Unless otherwise specified, the lower limit of the pressure compensation temperature range for the sensor chip should be. -55 °C, -45 °C, -40 °C. -30°C, -20°C, -10°C, 0°C. Unless otherwise specified, the upper limit of the pressure compensation temperature range for sensor chips should be. 50°C, 60°C, 70°C, 85°C, 100°C. 125°C, 150°C, 175°C,.200°C, 250°C.

5.4 Excitation Power Supply

5.4.1 Constant Current Excitation When the sensor chip uses constant current excitation for voltage measurement, the value of the DC excitation current should not exceed 8mA. When the sensor chip uses constant current excitation for temperature measurement, the value of the DC excitation current should not exceed 2mA.

5.4.2 Constant Voltage Excitation When the sensor chip uses constant voltage excitation for voltage measurement, the DC excitation voltage should preferably be selected from the following values. 1.6VDC, 3VDC, 3.3VDC. 5VDC, 6VDC, 9VDC, 10VDC, 12VDC, 15VDC, 18VDC, 24VDC, 36VDC. When the sensor chip uses constant voltage excitation for temperature measurement, the operating current should not exceed 2mA.

6.2 Basic Performance

6.2.1 Electrical connection for pressure testing The electrical connection method for voltage measurement using a sensor chip should be selected from the following. closed-loop, semi-open-loop, or open-loop. (See diagram for voltage measurement electrical connection method.) As shown in Figure 5.

b) Semi-open loop

6.2.2 Appearance

6.2.2.1 Front The front of the sensor chip adopts the following specifications.

a) Defects, cracks, and scratches should not extend to an area within 25 µm of the effective pattern and sensitive diaphragm;

b) Defects, cracks, or scratches. Cracks should not extend to or come into contact with the metallization area of the sensor chip;

c) The passivation layer should not have pits or pinholes within 25µm of the varistor;

d) If the metallization layer is damaged and the underlying passivation layer is exposed, the width of the undamaged metal strip should be greater than the nominal metal strip width. 50%;

e) The size of any extraneous material adhering to the surface of the sensor chip should not exceed 25 µm in any direction. The area occupied by excess material attached to the surface should not exceed 10% of the effective area of the graphic.

6.2.2.2 Back side Where applicable, the following specifications shall apply to the back of the sensor chip.

a) The sealing surface should be closed;

b) Static sealing defects should not affect the sealing of the nominal sealing surface;

c) There should be no excess material on the sensitive membrane.

6.2.3 Leakage Current The permissible leakage current between the sensor chip's sensing elements (including temperature sensing elements and varistors) and the silicon substrate under a specified bias voltage. The current should not exceed 15 µA. The bias voltage should be selected from the following values. 10VDC, 15VDC, 20VDC, 25VDC, 30VDC, 35VDC, 40VDC.

6.2.4 Breakdown Voltage For PN junction isolated sensor chips, the sensing elements (including temperature sensing elements and varistors) of the sensor chip are separated from the silicon substrate by... Under the maximum allowable test current, its breakdown voltage should not be less than the specified minimum breakdown voltage. The test current should be selected from the following values. 2µA, 5µA, 10µA, 20µA, 50µA. The specified minimum breakdown voltage should be selected from the following values. 10VDC, 15VDC, 20VDC, 25VDC, 30VDC. 40VDC, 50VDC, 80VDC, 100VDC.

6.2.5 Isolation Voltage For dielectric-isolated sensor chips, the sensing elements (including temperature sensing elements and varistors) of the sensor chip are separated from the silicon substrate. Under the maximum permissible test current, its isolation voltage should not be less than the specified minimum isolation voltage. The test current should be selected from the following values. 1µA, 2µA, 5µA, 10µA. The minimum isolation voltage should be selected from the following values. 10VDC, 15VDC, 20VDC, 25VDC, 30VDC, 40VDC. 50VDC, 80VDC, 100VDC.

6.3 Basic Characteristics of Sensor Chip Pressure Measurement

6.3.1 Varistor The nominal resistance value of the varistor for the sensor chip should be selected from the following values. 350Omega, 600Omega, 1kOmega, 2kOmega, 3kOmega, 4kOmega. 5kOmega, 8kOmega, 10kOmega, 12.5kOmega, 15kOmega, 20kOmega, 25kOmega. The tolerance of the resistance value of a varistor is expressed as a percentage of the resistance value, and the following values should be used. ±10%, ±15%, ±20%, ±25%.

6.3.2 Zero-point offset voltage For an open-reference pressure-sensing cavity sensor chip, under a specified excitation power supply, the zero-point offset voltage value measured by the sensor chip is... The values should be selected from the following. ±1mV, ±5mV, ±10mV, ±15mV, ±20mV, ±30mV, ±50mV.

6.3.3 Offset Voltage at Normal Voltage For a closed-type reference pressure-sensing cavity sensor chip, under a specified excitation power supply, the constant pressure offset voltage value measured by the sensor chip is... The values should be selected from the following. ±1mV, ±5mV, ±10mV, ±15mV, ±20mV, ±30mV, ±50mV. <=100mV, <=150mV.

6.3.4 Static Performance

6.3.4.1 Full-scale output Under the specified excitation power supply, the full-scale output value of the sensor chip should be selected from the following values. 30mV, 40mV, 60mV, 80mV, 100mV, 120mV, 150mV,.200mV, 300mV, 400mV, 500mV. The error range should be selected from the following values. ±10%, ±15%, ±20%, ±25%.

6.3.4.2 Nonlinearity The nonlinearity of the sensor chip's voltage measurement should comply with the product technical specifications (detailed specifications) and should be selected from the following values. <=0.03%FS. <=0.05%FS, <=0.15%FS, <=0.30%FS, <=0.50%FS, <=1.50%FS.

6.3.4.3 Hysteresis The hysteresis of the sensor chip for voltage measurement should comply with the product technical specifications (detailed specifications) and should be selected from the following values. <=0.02%FS. <=0.05%FS, <=0.10%FS, <=0.20%FS, <=0.50%FS, <=1.00%FS.

6.3.4.4 Repeatability The repeatability of the pressure measurement by the sensor chip should comply with the product technical specifications (detailed specifications) and should be selected from the following values. <=0.02%FS. <=0.05%FS, <=0.10%FS, <=0.20%FS, <=0.50%FS, <=1.00%FS.

6.3.4.5 Overload The overload of the sensor chip for voltage measurement should comply with the product technical specifications (detailed specifications) and should be selected from the following values. 150%FS. 200%FS, 300%FS, 500%FS.

6.3.5 Stability

6.3.5.1 Zero-point output drift The zero-point output drift of the sensor chip voltage measurement within a specified time is specified as follows:

a) The specified time should be selected from the following values. 4h, 8h, 12h, 24h, 48h, 72h, 96h, 120h.

b) The drift value should be selected from the following values. <=0.05%FS, <=0.1%FS, <=0.25%FS, <=0.50%FS.

6.3.5.2 Thermal Zero-Point Drift The thermal zero-point drift of the sensor chip for pressure measurement should comply with the product technical specifications (detailed specifications). It should be selected from the following values. ±0.01%FS/°C, ±0.03%FS/°C, ±0.04%FS/°C, ±0.05%FS/°C, ±0.08%FS/°C, ±0.10%FS/°C.

6.3.5.3 Full-scale thermal output drift The thermal full-scale output drift of the sensor chip for pressure measurement should comply with the product technical specifications (detailed specifications). The following values should be selected. Take. ±0.01%FS/°C, ±0.03%FS/°C, ±0.04%FS/°C, ±0.05%FS/°C, ±0.08%FS/°C, ±0.10%FS/°C.

6.4 Basic Characteristics of Temperature Measurement by Sensor Chip

6.4.1 Maximum permissible error The maximum permissible error for temperature measurement by the sensor chip should comply with the product technical specifications (detailed specifications).

6.4.2 Full-scale temperature measurement output The full-scale output of the sensor chip for temperature measurement should comply with the product technical specifications (detailed specifications).

6.4.3 Compliance The temperature measurement compliance of the sensor chip should meet the requirements of the product technical conditions (detailed specifications).

6.4.4 Temperature measurement repeatability The repeatability of temperature measurement by the sensor chip should comply with the product technical specifications (detailed specifications).

6.4.5 Classification of Resistance-Type Temperature Sensing Elements Resistance-type temperature sensing elements, which utilize the property of metal or semiconductor resistance changing with temperature, are classified as follows:

a) Platinum resistance thermometer;

b) Alloy resistors;

c) Nickel resistor;

d) Copper resistor;

e) Silicon resistor;

6.4.6 Resistance value The resistance value of the temperature sensing element of the resistance-type temperature sensor chip at 0°C should comply with the product technical conditions (detailed specifications).

6.4.7 Self-heating Under the specified maximum current, self-heating should not exceed 25% of the value corresponding to the nominal tolerance level.

6.4.8 Operating Current The measuring current flowing through the temperature sensing element should be limited to a specific value. The self-heating caused by this current should not exceed the specified value. This is referred to as 25% of the value corresponding to the allowable error level.

6.5 Pressure drift error of temperature sensing element The pressure drift error of the sensor chip temperature sensing element should not exceed 25% of the value corresponding to the nominal allowable error class.

7.1 Environmental Conditions

7.1.1 Environmental purification conditions Sensor chips should be tested in a cleanroom of class 100,000 or higher.

7.1.2 Reference Atmospheric Conditions The reference atmospheric conditions for the sensor chip are.

---Temperature. 20°C±2°C;

---Relative humidity. 30%~60%;

---Atmospheric pressure. 86kPa~106kPa.

7.1.3 Atmospheric conditions for general experiments When the sensor chip cannot or does not need to be tested under reference atmospheric conditions, the following atmospheric conditions should be used.

---Temperature. 15°C~30°C;

---Relative humidity. <=65%;

---Atmospheric pressure. 86kPa~106kPa.

7.2 Test Equipment The performance of the testing equipment shall be determined according to the following regulations.

a) The absolute value of the basic error of the pressure control system should be less than 1/3 of the basic error limit of the pressure measurement of the sensor chip;

b) The stability of the power supply should be less than 1/5 of the basic error limit of the sensor chip;

c) The absolute value of the basic error of the data acquisition equipment should be less than 1/5 of the basic error limit of the sensor chip;

d) The temperature field error should be less than 1/3 of the maximum permissible error of the temperature measurement of the sensor chip under test.

7.4 Basic Performance

7.4.1 Electrical connections and appearance for pressure testing The electrical connections and appearance of the sensor chip for voltage measurement should be inspected using a microscope with a magnification of at least 10x, under appropriate lighting conditions. The following will proceed.

7.4.2 Leakage Current

7.4.2.1 PN Junction Isolated Sensor Chip Connect the electrical connections as shown in Figure

6.Under the bias voltage (U) specified in 6.2.3, measure the sensor chip under no-light conditions. The leakage current of the sensor chip is calculated using formula (1) based on the voltage V across the standard resistor (R).

7.4.2.2 Insulating Dielectric Isolated Sensor Chip Connect the components as shown in Figure 7, and measure the voltage across the standard resistor (R_standard) under the bias voltage (U) specified in 6.2.3. (V), calculate the leakage current of the sensor chip according to formula (1).

7.4.3 Breakdown Voltage Under conditions of no light, the sensor chip is subjected to the maximum permissible test current specified in

6.2.4 to measure each sensitive element (including...). The reverse voltage between the lead-out pads of the temperature sensing element and the lead-out pads of the silicon substrate.

7.4.4 Isolation Voltage Under the maximum permissible test current specified in 6.2.5, measure the lead-out solder joints of each sensitive element (including temperature sensing element and varistor). The voltage between the pad and the lead-out pad of the silicon substrate.

7.5 Basic Characteristics of Sensor Chip Pressure Measurement

7.5.1 Varistor Measure the resistance between the lead pads of each varistor.

7.5.2 Zero-point offset voltage Under reference atmospheric conditions, apply the excitation power supply specified in 5.4, and test the output voltage when the pressure load under test is zero.

7.5.3 Offset Voltage at Normal Voltage Under reference atmospheric conditions, apply the excitation power supply specified in

5.4 and test the output voltage.

7.5.4 Static Performance

7.5.4.1 Assembly The sensor chip is fixed on a base that can be loaded for testing, and the signal is extracted by wire bonding. Keep the sensor chip surface clean and dry to prevent dust and moisture from contaminating it.

7.5.4.2 Test The assembled sensor chip should be placed under test conditions for no less than 2 hours. Connect the test system as shown in Figure 8 and apply the conditions specified in 5.4. The excitation power supply is preheated for 30 minutes. Figure

8.Block diagram of the stress testing system Apply a preload to the sensor chip from zero load to its rated load. Once the load stabilizes, return it to zero load. Repeat this preload application process three times. Then, 5 to 11 test points evenly distributed across the entire measurement range of the sensor chip were selected for testing, including the lower limit of the measurement range and... Upper limit. The test starts from the lower limit of the measurement range, and the load is steadily increased point by point according to the specified test points. The readings at each test point are taken in relation to the input pressure. The corresponding sensor chip output value is measured up to the upper limit of the measurement range (called forward stroke). Then, the measurement is performed in the original test point sequence (called reverse stroke). One forward and reverse stroke constitutes one cycle, and three or more calibration cycles are performed consecutively. The reference working line of the sensor chip shall be calculated and determined according to the provisions of A.1 Actual Calibration Characteristics and A.2 Reference Working Line in Appendix A. Draw a straight line.

7.5.4.3 Full-scale output Calculate the full-scale output of the sensor chip for pressure measurement according to the full-scale output specification in A.3.

7.5.4.4 Nonlinearity The nonlinearity of the sensor chip pressure measurement is calculated according to the nonlinearity specification in A.4.

7.5.4.5 Hysteresis The hysteresis of the sensor chip for voltage measurement is calculated according to the hysteresis specification in A.5.

7.5.4.6 Repeatability The repeatability of the sensor chip pressure measurement is calculated according to the repeatability specification in A.6.

7.5.4.7 Overload Apply the overload load specified in

6.3.4.5 to the assembled sensor chip, maintain it for at least 1 minute, and then unload it to zero load. Repeat the test 3 times. After a 3-minute recovery period, test again, and then perform the tests according to the inspection items specified in the product technical specifications (detailed specifications).

7.5.5 Stability

7.5.5.1 Zero-point output drift After assembly, the sensor chips are placed under reference atmospheric conditions without load, and at least nine evenly distributed chips are selected within a specified time. The zero-point output of the sensor chip is recorded at the time test point. The zero-point output drift is calculated according to the provisions of A.7 Zero-point output drift.

7.5.5.2 Thermal Zero-Point Drift The assembled sensor chip was placed in a high and low temperature test chamber and kept at constant temperatures at room temperature, the upper limit operating temperature, and the lower limit operating temperature, respectively. Record the zero-point output value of the sensor chip at each of the above temperature points for 1 hour [or the time specified in the product technical conditions (detailed specifications)]. Zero-point drift is calculated according to the provisions of A.8 thermal zero-point drift.

7.5.5.3 Full-scale thermal output drift The assembled sensor chip was placed in a high and low temperature test chamber and kept at constant temperatures at room temperature, the upper limit operating temperature, and the lower limit operating temperature, respectively. Record the full-scale output value of the sensor chip at each of the above temperature points for 1 hour [or the time specified in the product technical conditions (detailed specifications)]. The thermal full-scale output drift is calculated according to the A.9 thermal full-scale output drift specification.

7.6 Basic Characteristics of Temperature Measurement by Sensor Chip

7.6.1 Assembly Assemble the sensor chip according to the requirements of 7.5.4.1.

7.6.2 Test The assembled sensor chip should be placed under test conditions for no less than 2 hours. Connect the test system as shown in Figure 9 and apply the conditions specified in 5.4. The excitation power supply is preheated for 30 minutes. Figure

9.Block diagram of temperature testing system Tests were conducted at 5 to 9 test points that were roughly evenly distributed across the entire operating temperature range of the sensor chip, including... 0°C, lower limit of temperature measurement range, and upper limit of temperature measurement range. The test starts from the lower limit of the measurement range and gradually increases the temperature at the specified test points. Temperature is measured at each test point, and the output value of the sensor chip is read until the upper limit of the measurement range (called the positive stroke). Then, the original test sequence is followed. Return to calibration (also known as reverse travel). One forward and reverse travel constitutes one cycle, and three or more calibration cycles are performed consecutively. Calculate and determine the temperature reference curve of the sensor chip according to GB/T 18459.

7.6.3 Maximum permissible error Substitute the sensor temperature output value obtained in

7.6.2 into the temperature reference curve to calculate the sensor temperature measurement value for each test point in each cycle. The temperature readings are compared with the standard temperature during the test, and the sensor temperature measurement error for each test point in each cycle is calculated.

7.6.4 Full-scale temperature measurement output The full-scale output of the sensor chip for temperature measurement is calculated according to the specifications in A.3.

7.6.5 Compliance Calculate the temperature measurement compliance of the sensor chip according to GB/T 18459.

7.6.6 Temperature measurement repeatability The temperature measurement repeatability of the sensor chip is calculated according to the repeatability specification in A.6.

7.6.7 Resistance value Measure the resistance value between the resistor leads at 0°C.

7.6.8 Self-heating The assembled sensor chip is placed in a temperature field and heated or cooled at a rate of less than 1°C/min until the temperature reaches ±25°C. The temperature was kept constant at 1°C for 1 hour to obtain a stable output value for the sensor chip's temperature measurement; then, the specified maximum current was applied to test the temperature sensing element of the sensor chip. A stable output value was obtained; these values were substituted into the reference curve equation to calculate the corresponding temperature readings measured by the sensor under different currents, and the current was also calculated. The increase in temperature reading of the sensor chip's temperature sensing element caused by energy dissipation.

7.6.9 Operating Current A specified bias voltage is applied to the temperature sensing element of the sensor chip at 25°C±1°C, and the bias voltage is measured using an ammeter. Electric current.

7.7 Pressure drift error of temperature sensing element The assembled sensor chip is placed in a temperature field, and the excitation power supply specified in

5.4 is applied, with the temperature increased or decreased at a rate of less than 1°C/min. Adjust the temperature to 25°C±1°C. For oil pressure applications, repeat the pressurization, depressurization, and venting process to remove as much air as possible from the pressure chamber. The body was kept at a constant temperature for 1 hour, and the stable output value of the temperature measured by the sensor chip was obtained; a pressure load at the upper limit of the pressure measurement range was applied to the sensor chip, and then... After the output signal stabilizes, the stable output value of the temperature sensing element of the sensor chip is detected; these values are then substituted into the reference curve equation to calculate the applied pressure load. The temperature readings from the front and rear sensors are measured, and the difference between the two is calculated.