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GB/T 46567.1-2025Intelligent computing - Test method for memristors - Part 1: Basic characteristics (English PDF)

智能计算　忆阻器测试方法　第1部分：基础特性

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

October 31, 2025

Implementation date

October 31, 2025

Scope

GB/T 46567.1-2025 is the English-translated version of 智能计算　忆阻器测试方法　第1部分：基础特性.

GB/T 46567.1-2025 is the Chinese standard "Intelligent computing - Test method for memristors - Part 1: Basic characteristics".

Its scope clause reads: This document specifies the requirements for memristor testing equipment and environmental conditions, and describes the basic characteristics of memristor reading, electrical preprocessing, enhancement, and suppression.

The test methods for sexuality were defined, and the requirements for test reports were specified. This document applies to the testing of fundamental characteristics of two-terminal bipolar memristors, including read, electrical preprocessing, enhancement, and suppression. Its clauses include terms and definitions.

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Document preview — GB/T 46567.1-2025

National Standard of the People's Republic of China

ICS: 31.080.99
Classification: L 40

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Preface
Introduction
1.Scope
2 Normative References
3.Terms and Definitions
4 Device under test
5.Testing Equipment and Environmental Conditions
5.1 Test Apparatus
5.2 Test Environment Conditions
6.Test Methods
6.1 Read
6.2 Electrical Pretreatment
6.3 Enhancement
6.4 Inhibition
7 Test Report
Appendix A (Informative) Test Report Template

1 Scope

This document specifies the requirements for memristor testing equipment and environmental conditions, and describes the basic characteristics of memristor reading, electrical preprocessing, enhancement, and suppression.

The test methods for sexuality were defined, and the requirements for test reports were specified.

This document applies to the testing of fundamental characteristics of two-terminal bipolar memristors, including read, electrical preprocessing, enhancement, and suppression.

2 Normative references

This document does not contain any normative references.

3 Terms and Definitions

The following terms and definitions apply to this document.

3.1 memristor

A nonlinear electronic component that can remember the amount of charge or magnetic flux flowing through it by changes in resistance.

3.2 pre-synaptic voltage

Vpre

The voltage applied to the presynaptic neuron of the memristor.

3.3 post-synaptic voltage

Vpost

The voltage applied to the postsynaptic neuron of the memristor.

3.4 Rread

The resistance value of the memristor measured during the reading process (3.6) is the ratio of the reading voltage (3.7) to the reading current (3.8).

3.5 Gread

The conductance of the memristor measured during the reading process (3.6) is the ratio of the reading current (3.8) to the reading voltage (3.7).

3.6 Read

Operations to obtain the memristor resistance (3.4) or memristor conductance (3.5). […]

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 14 pages — is available in the English PDF.

Editions of GB/T 46567.1

Edition	Title	Revision	Status
GB/T 46567.1-2025	Intelligent computing - Test method for memristor - Part 1: Basic characteristics	current edition	Current

This page sells the current edition, GB/T 46567.1-2025. Earlier editions are listed for reference only.

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