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GB/T 45823-2025High purity sand applied inside quartz crucible for photovoltaic monocrystalline silicon growth (English PDF)

光伏单晶硅生长用石英坩埚高纯内层砂

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

May 30, 2025

Implementation date

December 1, 2025

Scope

GB/T 45823-2025 is the English-translated version of 光伏单晶硅生长用石英坩埚高纯内层砂.

GB/T 45823-2025 is the Chinese national standard covering the quartz sand that forms the inner layer of a crucible, the layer in contact with the silicon melt — the appearance and the particle size, the particle shape set as a ratio of maximum to minimum Feret diameter, the loss on ignition, the impurity element limits that decide how much metal reaches the ingot, the test methods by chemical analysis, laser diffraction and image analysis, and the inspection rules. It covers both sand milled from natural quartz ore and sand made synthetically. First edition, under the China Building Materials Federation. In force from 1 December 2025. Issued on 30 May 2025, it has been in force since 1 December 2025.

Document preview — GB/T 45823-2025

National Standard of the People's Republic of China

ICS
81.040.10
Classification
Q 35

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Contents

  • Foreword
  • 1 Scope
  • 2 Normative references
  • 3 Terms and definitions
  • 4 Requirements
  • 4.1 Appearance
  • 4.2 Granularity
  • 4.3 Particle shape
  • 4.4 Loss on ignition
  • 4.5 Impurity element content

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.

Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.

This document was proposed by China Building Materials Federation.

This document is under the jurisdiction of the National Technical Committee for Standardization of Industrial Glass and Special Glass (SAC/TC447).

This document was drafted by: China National Testing Holding Group Co., Ltd., Jiangsu Pacific Quartz Co., Ltd., China National Building Materials Quzhou Jingelan Quartz Co., Ltd., Inner Mongolia Oujing Technology Co., Ltd., Changfei Quartz Technology (Wuhan) Co., Ltd., Hubei Feilihua Stone Ying Glass Co., Ltd., Langfang Herlaus Solar Photovoltaic Co., Ltd., Beijing Shijing Optoelectronics Technology Co., Ltd., Ultrapure Minerals New Materials Industry Technology Research Institute, Zhongyan Precision Machinery (Suzhou) Co., Ltd., China Building Materials Science Research Institute Co., Ltd., Liaoning Hanjing Semiconductor Materials Co., Ltd., Jiangsu Fengri Quartz Technology Co., Ltd., Sinoma Jiangsu Solar New Materials Co., Ltd., Xi'an Shengbaohong New Materials Technology Co., Ltd., Jiangsu Fugao New Materials Technology Co., Ltd., Hubei Zhongyu New Materials Co., Ltd., Hubei Feilihua Rongjian Technology Co., Ltd., Jiangsu Wohong Equipment Co., Ltd., Hubei Puyuan Quartz Technology Co., Ltd., Linyi Kunsheng New Materials Technology Co., Ltd., Jiuxi Silicon Industry New Materials (Chuzhou) Co., Ltd., Jiuquan Hengrui New Quartz Materials Co., Ltd., Pucheng Telaijing Technology Co., Ltd., Anhui Yishitong Materials Technology Co., Ltd., Anhui Victori New Materials Technology Co., Ltd., Anhui Shigui New Materials Technology Development Co., Ltd., Central South University, Henan GCL Silicon New Materials Co., Ltd., Henan Yiyan New Materials Co., Ltd., Hubei Xinyang Semiconductor Technology Co., Ltd., Zhongqi (Hubei) New Materials Co., Ltd., Jiangsu Junge Zhicheng Technology Co., Ltd., Hebei Yuejie Semiconductor Materials Technology Co., Ltd., Anhui Huanchenguang Electronic Technology Co., Ltd., Jiuzhi Optoelectronic Materials Technology Co., Ltd., Beijing Yaze Quartz Materials Co., Ltd., Wuhan University of Technology, Chinese Academy of Sciences Hefei Institutes of Physical Science.

The main drafters of this document are: Liu Huanmin, Yang Xuedong, Qian Weigang, Hua Ning, Du Xinglin, Guo Jianwei, Zhu Jihong, Ouyang Chen, Wang Jingxia, Zhang Han, Zhang Chunlin, Yin Qiaoyun, Liu Yaru, Nie Lanjian, Yang Xiaohui, Li Xinyi, Wei Yuanbai, Wan Pengyuan, Zhu Mengyao, Jia Jianliang, Zhu Zhongxiao, Huang Yehao, He Hengping, Cheng Haotian, Zhang Yueqiu, Gao Jun, Li Laibin, Liu Bing, Wang Junwei, Xiao Junping, Kong Zhuang, Du Xiurong, Lü Jinyu, Li Yajie, Cheng Pan, Huang Tianci, Deng Biyun, Wang Yihua, Wang Yu, Wang Qirong, Wang Zitao, Sun Zengqing, Jiang Xuesong, Su Yonggang, Shen Yunan, Zhang Haoyun, Ji Xiang, Chen Bo, Chen Guoan, Yan Haoran, Song Tao, Zhao Ziying, Jiang Hongfu, Shen Jin, Xiong Hongwen, Zhang Junyan, Xia Chunxin, Zhang Yan, Zhou Jianxin, Li Yubiao, Chen Jian.

High-purity inner layer sand for quartz crucible for photovoltaic single crystal silicon growth

1 Scope

This document specifies the requirements, inspection rules and marking, packaging, transportation and storage of high-purity inner sand for quartz crucibles used in photovoltaic single crystal silicon growth.

The corresponding test methods are described.

This document applies to the production of high-purity quartz sand (hereinafter referred to as "quartz sand") used as the inner layer of quartz crucibles for photovoltaic single crystal silicon growth.

Inspection, delivery and acceptance, including natural quartz produced by processing, purification and other production processes using natural quartz ore or crystal as raw materials Sand, and synthetic quartz sand prepared by physical and chemical methods using high-purity silicon-containing substances as raw materials.

2 Normative references

GB/T 191

GB/T 3284

GB/T 19077

GB/T 38879

3 Terms and definitions

There are no terms or definitions that require definition in this document.

4 Requirements

4.1 Appearance

The quartz sand should contain no particles that are visible to the naked eye and are different from the matrix.

4.2 Granularity

The particle size of quartz sand is determined by the supplier and the buyer.

4.3 Particle shape

Among the quartz sand particles with Feret diameter greater than 50 µm, the particles with a ratio of the maximum Feret diameter to the minimum Feret diameter greater than 2.1 The number of particles should not exceed 5.0%.

4.4 Loss on ignition

The loss on ignition of quartz sand should not exceed 0.02%.

4.5 Impurity element content

The content of impurity elements in quartz sand shall comply with the requirements of Table 1.

......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

Referenced standards

Editions of GB/T 45823

EditionTitleRevisionStatus
GB/T 45823-2025High purity sand applied inside quartz crucible for photovoltaic monocrystalline silicon growthcurrent editionCurrent

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