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GB/T 45767-2025Silicon nitride ceramic substrates (English PDF)

氮化硅陶瓷基片

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Issued by

SAMR; SAC

Level / Type

National · Recommended

Issue date

June 30, 2025

Implementation date

January 1, 2026

Scope

GB/T 45767-2025 is the English-translated version of 氮化硅陶瓷基片.

GB/T 45767-2025 is the Chinese national standard covering the ceramic plate a power semiconductor module is built on — the classification and marking, the flexural strength in three- or four-point bending, the thermal conductivity and the thermal expansion coefficient that has to sit close to that of the chip it carries, the dielectric constant and loss, the volume resistivity and electric strength, the density and porosity, the surface roughness, the hardness and fracture resistance, and the inspection rules. First edition, under the China Building Materials Federation. In force from 1 January 2026. Issued on 30 June 2025, it has been in force since 1 January 2026.

Document preview — GB/T 45767-2025

National Standard of the People's Republic of China

ICS
81.060.30
Classification
Q 32

Issued by: State Administration for Market Regulation; Standardization Administration of the PRC

Contents

  • Foreword
  • 1 Scope
  • 2 Normative references
  • 3 Terms and Definitions
  • 3.1

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.

Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.

This document is proposed by China Building Materials Federation.

This document is under the jurisdiction of the National Technical Committee for Standardization of Industrial Ceramics (SAC/TC194).

This document was drafted by: Sinoma High-Tech Nitride Ceramics Co., Ltd., Hengyang Kaixin Special Materials Technology Co., Ltd., Zhejiang Polyhedron New Materials Co., Ltd., Zhejiang Litai Composite Materials Co., Ltd., Jilin Changyu Special Ceramics New Materials Technology Co., Ltd., Shandong Industrial Ceramics Porcelain Research and Design Institute Co., Ltd., Zhejiang Dehui Electronic Ceramics Co., Ltd., Zhuzhou Ruidel Intelligent Equipment Co., Ltd., Henan Nolante New Materials Technology Co., Ltd., Shandong Sinoceramic Functional Materials Co., Ltd., Hebei Gaofu Silicon Nitride Materials Co., Ltd., Rogers Technology (Suzhou) Co., Ltd.

Co., Ltd., Shanghai Institute of Ceramics, Chinese Academy of Sciences, China National Testing Holding Group Zibo Co., Ltd., Zhuzhou Aisenda New Materials Technology Co., Ltd., Taisheng New Materials Technology Co., Ltd., Jiangsu Fulehua Power Semiconductor Research Institute Co., Ltd., and Kimike Materials Technology (Suzhou) Co., Ltd., Fujian Zhenjing New Materials Technology Co., Ltd., Anyang Henry Hi-Tech Industrial Co., Ltd., Nantong Sanzhi Precision Ceramics Co., Ltd., An Huilanxun Communication Technology Co., Ltd., Jiangxi Silicon Nitride New Materials Co., Ltd., Fujian Huaqing Electronic Materials Technology Co., Ltd., Loudi Andi Yas Electronic Ceramics Co., Ltd., Wuxi Haigood New Technology Co., Ltd., Jinan University, Hunan Weishang Technology Co., Ltd., Xinhua County, Hunan Province Xinxing Electronic Ceramics Co., Ltd., Zhejiang Zhengtian New Materials Technology Co., Ltd., and Shandong Minghui Special Ceramics Co., Ltd.

The main drafters of this document are: Sun Feng, Shang Chaofeng, Zhang Hui, Wang Zaiyi, Dong Tingxia, Zhang Yelei, Dong Weiqiang, Chen Changzhu, Li Yongquan, Luan Ting, Zhang Jingxian, Zhang Guojun, Wang Yujin, Li Yingxin, Jiang Danyu, Wang Xingang, Li Kai, Wu Ping, Zhang Yunhe, Sun Wei, Tian Zhuo, Huang Shidong, Gao Liwen, Li Bowen, Dai Weiming, Ge Zhuang, Liu Weiping, Qu Peng, Xia Jinghao, Li Qiuju, Yan Yongjie, Zhu Wei, Lin Wensong, Li Guang, Huang Wensi, Kang Dinghua, Mo Xuekui, Chen Pingsong, Yan Hui, Zeng Xiaofeng, Yuan Zhenwei, Zhang Hengju, Huang Rongxia, Zhang Xuelian, Cao Jianhui, Jiang Weixin, Liu Shen, Zhao Degang, Lin Delong, Wang Meiling.

Silicon nitride ceramic substrate

1 Scope

This document specifies the product classification and marking, technical requirements, test methods, inspection rules, marking, packaging, transportation, etc. of silicon nitride ceramic substrates. and storage.

This document is applicable to silicon nitride ceramic substrates for power semiconductor modules and can be used as a reference for silicon nitride ceramic substrates for other functions.

2 Normative references

GB/T 191

GB/T 1408.1

GB/T 2828.1

GB/T 5594.4

GB/T 5594.5

GB/T 6062

GB/T 9530

GB/T 10700

GB/T 14619-2013

GB/T 16534

GB/T 16535

GB/T 16555

GB/T 17991

GB/T 22588

GB/T 25995

GB/T 39975-2021

GB/T 41605

GB/T 45763

3 Terms and Definitions

The terms and definitions defined in GB/T 9530 and GB/T 17991 and the following apply to this document.

3.1

A sheet-like silicon nitride ceramic support on which conductor patterns, membrane elements, or electronic components can be printed.

Note. Hereinafter referred to as substrate.

......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.

Referenced standards

Editions of GB/T 45767

EditionTitleRevisionStatus
GB/T 45767-2025Silicon nitride ceramic subtratescurrent editionCurrent

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