GB/T 45722-2025Semiconductor devices - Constant current electromigration test (English PDF)
半导体器件 恒流电迁移试验
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Issued by
State Administration for Market Regulation, China National Standardization Administration
Level / Type
National · Recommended
Issue date
May 30, 2025
Implementation date
September 1, 2025
Scope
GB/T 45722-2025 is the English-translated version of 半导体器件 恒流电迁移试验.
GB/T 45722-2025 is the general constant current electromigration test for the metal interconnects of a chip, together with via chains and contact hole chains. It gives the background, the sample size, the test structures, the test conditions, the failure criteria and the data analysis, including the way the median failure time t(50%) is worked out.
The quantities are kept apart: the current density allowed in a via and in a metal line in the finished product, the current densities actually used on the test structures during the test, and the failure time at a given cumulative failure probability; the Blech length, the critical interconnect length below which electromigration failure becomes unlikely, is defined as well.
Foundries and reliability laboratories use it. Identical to IEC 62415:2010, it was issued on 30 May 2025 and applies from 1 September 2025.
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Document preview — GB/T 45722-2025
National Standard of the People's Republic of China
- ICS
- 31.080.01
- Classification
- L 40
Issued by: State Administration for Market Regulation, China National Standardization Administration
Contents
- Preface
- 1 Scope
- 2 Normative references
- 3 Terms, definitions and symbols
- 4 Background
- 5 Sample size
- 6 Test Structure
- 7 Test conditions
- 8 Failure criteria
- 9 Data Analysis
- References
Foreword
This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.
This document is equivalent to IEC 62415:2010 "Constant current electromigration test for semiconductor devices". This document adds a chapter on "Normative References".
1 Scope
This document describes the general constant current electromigration test method for metal interconnects, connecting via chains and contact hole chains.
2 Normative references
This document has no normative references.
3 Terms, definitions and symbols
3.1 Notation
The following symbols apply to this document.
3.1.1 Current density in via Jvia_use
The maximum current density allowed to flow through the through-hole of an actual product.
3.1.2 Current density in metal interconnect Jline_use
The maximum current density allowed to flow in the metal interconnect line of an actual product.
3.1.3 Current density in the via during the test Jvia_test
Current density in a through-hole test structure during electromigration testing.
3.1.4 Current density in metal interconnects during the test Jline_test
Current density in a metal interconnect test structure during electromigration testing.
3.1.5 Failure time t(x%)
The failure time with a cumulative failure probability of x%.
Note: For the calculation method of t(50%), see Chapter 9.
3.2 Terms and definitions
The following terms and definitions apply to this document.
3.2.1 Test structure TEG
Different test structures of metal interconnects, via chains and contact chains for electromigration testing.
3.2.2 Blechlength
The critical length of the interconnect line, below which electromigration failure is less likely to occur.
NOTE: The drift of metal atoms can lead to the accumulation of stress in metal interconnects, which in turn causes the reflow of atoms.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 24 pages — is available in the English PDF.
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