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GB/T 45720-2025Semiconductor devices - Time dependent dielectric breakdown (TDDB) test for gate dielectric films (English PDF)

半导体器件栅介质层的时间相关介电击穿（TDDB）试验

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Issued by

State Administration for Market Regulation, China National Standardization Administration

Level / Type

National · Recommended

Issue date

May 30, 2025

Implementation date

September 1, 2025

Scope

GB/T 45720-2025 is the English-translated version of 半导体器件栅介质层的时间相关介电击穿（TDDB）试验.

GB/T 45720-2025 stresses the gate dielectric of a semiconductor device until it breaks down and uses the result to estimate how long the device would last in service.

It covers the test equipment, the sample and its capacitor test structure, then the procedure of pre-test, test conditions and criteria, then lifetime estimation with its acceleration model and the link between lifetime and gate oxide area.

The terms are precise: the gate oxide field is the oxide voltage divided by the oxide thickness, in MV/cm, the thickness being established by electron microscopy or capacitance-voltage analysis, and gate leakage current is recorded before and under stress.

An informative annex adds guidance on test conditions and data analysis. Wafer fabs and reliability laboratories use it. Identical to IEC 62374:2007, it was issued on 30 May 2025 and applies from 1 September 2025.

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Document preview — GB/T 45720-2025

National Standard of the People's Republic of China

ICS: 31.080.01
Classification: L 55

Issued by: State Administration for Market Regulation, China National Standardization Administration

Preface
1 Scope
2 Normative references
3 Terms and Definitions
4 Test equipment
5 Test sample
5.1 General
5.2 Test structure (capacitor structure)
5.3 Area
6 Step
6.1 Overview
6.2 Pre-test
6.3 Test conditions
6.4 Criteria
7 Lifetime Estimation
7.1 Overview
7.2 Acceleration Model
7.3 Lifetime Estimation Step
8 Relationship between lifetime and gate oxide area
Appendix A (Informative) Supplementary determination of test conditions and data analysis
References

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.

This document is equivalent to IEC 62374:2007 "Time-dependent dielectric breakdown (TDDB) test for gate dielectric layer of semiconductor devices". This document adds a chapter on "Normative References".

1 Scope

This document describes the time-dependent dielectric breakdown (TDDB) test method for the gate dielectric layer of semiconductor devices and the products that fail TDDB. Life time estimation method.

2 Normative references

This document has no normative references.

3 Terms and definitions

The following terms and definitions apply to this document.

3.1 The gate oxide voltage is divided by the gate oxide thickness, see formula (1)

Note: Eox = Vox/tox (1) Where. Eox---gate oxide electric field strength, in megavolts per centimeter (MV/cm);

Vox---gate oxide voltage; tox ---gate oxide thickness. tox should be determined by uniform, well-documented methods (physical analysis by scanning electron microscopy (SEM), transmission electron microscopy (TEM), or capacitance-voltage (CV) analysis).

It should be noted that the applied voltage is not necessarily the voltage on the gate oxide. Ultra-thin gate oxide has quantum confinement effects and gate electrode consumption.

Due to the exhaust effect, the gate oxide voltage will be lower than the applied voltage.

The method for measuring tox or the standard that specifies the measurement method is referenced in the data report.

3.2

Leakage current flowing in the gate lead of an insulated gate field effect transistor.

NOTE: Gate leakage current is usually represented by the letter "Ig".

3.3

The leakage current in the gate lead of the insulating gate oxide when the operating voltage is applied before the stress voltage or stress electric field is applied.

3.4 Limit current compliance current

The maximum current that a voltage can drive a device.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 37 pages — is available in the English PDF.

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