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GB/T 45718-2025Semiconductor devices - Time-dependent dielectric breakdown (TDDB) test for inter-metal layers (English PDF)

半导体器件内部金属层间的时间相关介电击穿（TDDB）试验

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Issued by

State Administration for Market Regulation, China National Standardization Administration

Level / Type

National · Recommended

Issue date

May 30, 2025

Implementation date

September 1, 2025

Scope

GB/T 45718-2025 is the English-translated version of 半导体器件内部金属层间的时间相关介电击穿（TDDB）试验.

GB/T 45718-2025 is the test by which the dielectric sitting between the metal layers of a chip is stressed until it breaks down, so its service life can be estimated.

It fixes the test equipment, the test sample and its test structure, then the procedure: the pre-test, the test conditions and the failure criteria, with breakdown time counted as the total stress time up to failure and leakage current measured before and under stress.

Lifetime estimation follows, with the acceleration model, the E model formula, the link between lifetime and the area of inter-metal dielectric, and an informative annex giving typical acceleration factors and the way the data are plotted on Weibull statistics.

Wafer fabs and reliability laboratories use it. Identical to IEC 62374-1:2010, it was issued on 30 May 2025 and applies from 1 September 2025.

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Document preview — GB/T 45718-2025

National Standard of the People's Republic of China

ICS: 31.080.01
Classification: L 40

Issued by: State Administration for Market Regulation, China National Standardization Administration

Preface
1 Scope
2 Normative references
3 Terms and Definitions
4 Test equipment
5 Test sample
5.1 General
5.2 Test Structure
6 Test Procedure
6.1 Overview
6.2 Pre-test
6.3 Test conditions
6.4 Failure criteria
7 Lifetime Estimation
7.1 General Principles
7.2 Acceleration Model
7.3 E model formula
7.4 Lifetime Estimation Step
8 Correlation between lifetime and dielectric area between metal layers
9 Explanation
Appendix A (Informative) Engineering Supplementary Notes on Lifetime Estimation
A.1 Typical value of acceleration factor
A.2 Process of plotting data using Weibull statistics
Reference

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting.

This document is equivalent to IEC 62374-1:2010 "Semiconductor devices Part 1: Time-dependent dielectric shock between internal metal layers" Wear (TDDB) Test. This document adds a chapter on "Normative References". The following minimal editorial changes were made to this document.

--- To coordinate with the existing standards, the name of the standard is changed to "Time-dependent dielectric breakdown between metal layers in semiconductor devices" (TDDB) test.

1 Scope

This document describes the test method, test structure and life span of Time Dependent Dielectric Breakdown (TDDB) between metal layers within semiconductor devices. Life time estimation method.

2 Normative references

This document has no normative references.

3 Terms and definitions

The following terms and definitions apply to this document.

3.1 Ileak

When the operating voltage is applied, leakage current flows through the dielectric layer between metal layers.

3.2 Ileak-0

Leakage current through the dielectric layer between metal layers before stress voltage is applied.

3.3 Limit current compliance current

The maximum current that a voltage can drive a device.

NOTE: An appropriate value of Icomp can be set for a specific test.

3.4 Imeas

3.5 Breakdown time

The sum of stress time from the application of stress voltage to failure of the dielectric between metal layers.

NOTE: In the CVS test, the applied stress voltage is repeatedly interrupted to measure and determine whether breakdown has occurred (see Figure 5).

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 30 pages — is available in the English PDF.

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