GB/T 44514-2024Micro-electromechanical system(MEMS) technology - Four-point bending test method for interfacial adhesion energy of layered MEMS materials (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting is required.

This document is equivalent to IEC 62047-31:2019 "Semiconductor devices - Microelectromechanical devices - Part 31: Layered MEMS materials interface Four-point bending test method for surface bonding energy.

The following minimal editorial changes were made to this document.

To coordinate with the existing standards, the name of the standard is changed to "Microelectromechanical Systems (MEMS) Technology - Layered MEMS Material Interface Adhesion Four-point bending test method";

To show the original state of the test piece, Figure 1a) is added as a schematic diagram of the test piece with prefabricated cracks before the test, and a pressure roller is added.

and description of the support rollers.

1 Scope

This paper describes a four-point bending measurement method based on fracture mechanics concepts, using pure bending forces acting on layered MEMS materials.

The critical bending moment of the weakest interface steady-state cracking is used to measure the interface adhesion energy.

This document applies to MEMS devices that deposit thin film layers on semiconductor substrates. The total thickness of the thin film layer should be less than the supporting substrate (usually silicon 1/100 of the thickness of the wafer).

2 Normative references

This document has no normative references.

3 Terms, definitions, symbols and names