GB/T 44181-2024Space environment—Method of single event upset rates prediction of semiconductor devices for space applications (English PDF)

Foreword

This document is in accordance with the provisions of GB/T 1.1-2020 "Guidelines for standardization work Part 1: Structure and drafting rules for standardization documents" Drafting is required.

Please note that some of the contents of this document may involve patents. The issuing organization of this document does not assume the responsibility for identifying patents.

This document was proposed by the Chinese Academy of Sciences.

This document is under the jurisdiction of the National Technical Committee on Aerospace Technology and Its Applications Standardization (SAC/TC 425).

This document was drafted by: China Academy of Space Technology, National University of Defense Technology, Harbin Institute of Technology, Beijing Institute of Microelectronics Technology Institute, National Space Science Center, Chinese Academy of Sciences.

The main drafters of this document are: Sun Yi, Zhang Hongwei, Mei Bo, Mo Rigen, Yu Qingkui, Wei Zhichao, Cao Shuang, Tang Min, Zhu Hengjing, Huang Jinying, Liang Bin, Li Changhong, Han Jianwei, Wang Tianqi, Ma Yingqi, and Zheng Hongchao.

Space Environment Semiconductor Devices for Spaceflight in Orbit Single Event Upset Rate Prediction Method

1 Scope

This document describes the method for conducting on-orbit single event upset rate estimation of semiconductor devices for space flight (hereinafter referred to as “devices”), including the original The main functions of the project are as follows. theory, process, calculation of LET spectrum of space charged particles and proton energy spectrum, processing and analysis of irradiation test data and prediction of single particle upset rate.

This document is applicable to the prediction of single event upset rate of devices caused by protons and heavy ions in the natural radiation environment of space.

This document is not applicable to the prediction of single-particle upset rates caused by high-energy electrons.

2 Normative references

GB/T 32452

GB/T 41206-2021

GB/T 44001

3 Terms and definitions

The terms and definitions defined in GB/T 32452 and the following apply to this document.