GB/T 37213-2018Test method for silicon brick dimension—Laser technology method (English PDF)

Foreword

This standard was drafted in accordance with the rules given in GB/T 1.1-2009.

1 Scope

This standard specifies methods for non-contact measurement of square silicon ingot size by laser method, including diagonal, chamfer, perpendicularity, side length and length.

This standard applies to the measurement of the size of a square silicon ingot cut by a silicon single crystal rod or a polycrystalline silicon ingot in the semiconductor and photovoltaic fields.

2 Normative references

The following documents are indispensable for the application of this document. For dated references, only the dated version applies to this document. For undated references, the latest edition (including all amendments) applies to this document.

GB/T 14264 semiconductor material terminology

GB/T 25076 silicon single crystal for solar cells

GB/T 29054 solar grade cast polycrystalline silicon block

3 Terms and definitions

The terms and definitions defined in GB/T 14264, GB/T 25076 and GB/T 29054 apply to this document.

4 Principle of the method

A size measurement system is constructed using laser technology, and a laser source is used as the incident light to illuminate the silicon ingot. Receiving a laser through a laser probe The light reflects the signal, forms a laser pulse waveform, and feeds the data back to the computer software processing control system. Control by computer software The system simulates and calculates the diagonal, chamfer, perpendicularity, side length and length parameters of the silicon ingot to obtain the dimensional parameters of the silicon ingot.

The diagonal, chamfer, and perpendicularity parameters of the silicon ingot are measured by the laser measuring components A, B, C, and D, as shown in FIG. Silicon ingot side length, length The parameters are measured by the laser measuring components P, L, Q, R, as shown in Figure 2. When measuring the length of a silicon ingot, the silicon ingot is perpendicular to the laser measuring component.

Surface movement, when the first end face of the silicon ingot passes through the laser to measure the plane of the component, the initial position of the four sides is recorded, when the second end of the silicon ingot passes When the laser is used to measure the plane of the component, the end positions of the four sides are recorded to determine the length of the silicon ingot.