GB/T 35309-2017Practice for evaluation of granular polysilicon by melter-zoner and spectroscopies (English PDF)

1 Scope

This standard specifies the use of zone melting method and spectroscopic analysis of granular polysilicon sub-position carbon atom concentration, the donor impurity concentration and acceptor

Method of impurity concentration.

This standard applies to the size of 600µm ~ 3000µm granular polysilicon, other sizes of granular polysilicon can refer to the standard

Quasi-implementation.

2 Normative references

The following documents for the application of this document is essential. For dated references, only the dated version applies to this article

Pieces. For undated references, the latest edition (including all amendments) applies to this document.

GB/T 620 chemical reagents hydrofluoric acid

GB/T 622 chemical reagents hydrochloric acid

GB/T 626 chemical reagent nitric acid

GB/T 1558 silicon substituted carbon atoms in infrared absorption measurement method

GB/T 4059 silicon polycrystalline atmosphere area test method of fusion phosphorus

GB/T 4842 argon

GB/T 6679 General rules for sampling solid chemical products

GB/T 11446.1 electronic water

GB/T 14264 semiconductor materials terminology

GB/T 24581 Low-temperature Fourier transform infrared spectroscopy method for the determination of III and V impurity in silicon single crystal

GB/T 25915.1 cleanroom and related controlled environment Part 1. air cleanliness level

GB/T 29057 zone melting crystal pulling method and spectroscopic analysis of polycrystalline silicon rod procedures

3 Terms and definitions

GB/T 14264 defined terms and definitions apply to this document.

4 method summary

The silicon particles into the high-purity quartz tube, the quartz tube into the high-purity argon below the silicon particles in the role of argon in fluidized, transfer

Section coil position and power, so that the gradual adhesion of particles of silicon in the molten silicon rods (or seed), prepared as polycrystalline silicon rods. Using GB/T 4059,

Argon atmosphere, the role of single crystal seed, the use of regional melting polycrystalline silicon rods grown as a single crystal ingot rod. Using GB/T 1558

And GB/T 24581 provisions of the method for determining the carbon substitution and donor impurity concentration, acceptor impurity concentration.

5 Interference factors

The main disturbing factors in sample preparation are as follows.