GB/T 28856-2012Silicon piezoresistive pressure-sensitive chip (English PDF)
硅压阻式压力敏感芯片
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Issued by
SAMR; SAC
Level / Type
National · Recommended
Issue date
November 5, 2012
Implementation date
February 15, 2013
Scope
GB/T 28856-2012 is the English-translated version of 硅压阻式压力敏感芯片.
GB/T 28856-2012 is the Chinese standard "Silicon piezoresistive pressure-sensitive chip".
Its scope clause reads: This standard specifies the silicon piezoresistive pressure sensor chip (hereinafter referred to as sensitive chip) terms and definitions, classification, basic parameters, requirements, testing Methods, inspection rules, marking, packaging, transportation and storage.
This standard applies to silicon piezoresistive pressure sensor chip. Its clauses include terms and definitions.
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Document preview — GB/T 28856-2012
National Standard of the People's Republic of China
- ICS
- 17.100
- Classification
- N 05
Issued by: State Administration for Market Regulation; Standardization Administration of the PRC
Contents
- Introduction
- 1 Scope
- 2 Normative references
- 3 Terms and definitions
- 4 Category
- 4.1 electrically isolated from Type
- 4.2 sensitive chip reference pressure sensing chamber type
- 5.1 Measuring range
- 5.2 Working medium
- 5.3 Operating temperature range
- 5.4 Incentive Power
- 6 requires
- 6.1 General
- 6.2 Basic performance requirements
- 7.1 Environmental conditions
- 7.2 Electrical connection and appearance
- 7.3 sensing resistor
- 7.4 Leakage current
- 7.5 Breakdown Voltage
- 7.7 Zero Offset Voltage
- 7.8 Atmospheric offset voltage
- 7.9 static performance
- 7.10 8 Stability
- 8 Inspection Rules
- 8.1 Inspection classification
- 8.2 factory inspection
- 8.3 Type inspection
- 9 signs, packaging, transportation and storage
- 9.1 mark
- 9.2 Packaging
- 9.3 Transport
- 9.4 Storage
1 Scope
This standard specifies the silicon piezoresistive pressure sensor chip (hereinafter referred to as sensitive chip) terms and definitions, classification, basic parameters, requirements, testing
Methods, inspection rules, marking, packaging, transportation and storage.
This standard applies to silicon piezoresistive pressure sensor chip.
2 Normative references
The following documents for the application of this document is essential. For dated references, only the dated version suitable for use herein
Member. For undated references, the latest edition (including any amendments) applies to this document.
GB/T 191-2008 Packaging - Pictorial signs
GB/T 2829-2002 periodic inspection Sampling procedures and tables (suitable for process stability test)
GB/T 7665-2005 sensor generic term
3 Terms and definitions
GB/T 7665-2005 and defined the following terms and definitions apply to this document.
3.1
Piezoresistive effect of silicon material, the pressure change is converted into a resistance change of the pressure-sensitive chip.
3.2 Dielectric isolation
With an insulating layer (such as oxide) around the sensitive monolithic semiconductor chip components, so that the chip in the form of one or more elements among
Into electrical isolation. (Element comprises a flexible diaphragm)
3.3 Remainder foreignmaterial
A pressure of 80kPa ~ 100kPa air blowing small foreign body can not afford.
3.4 Passivation layer
Grown or deposited directly on the chip surface of the silicon oxide, silicon nitride, or other insulating material.
Category 4
4.1 electrically isolated Type
Electrically isolated by type into.
--- PN junction isolation;
--- Dielectric isolation.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 15 pages — is available in the English PDF.
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