GB/T 26070-2010Characterization of subsurface damage in polished compound semiconductor wafers by reflectance difference spectroscopy method (English PDF)

1.1

standard specifies the test method III-V compound semiconductor single crystal polished subsurface damage.

1.2

This standard applies to GaAs, InP (GaP, GaSb can be reference) and other compound semiconductor single crystal polished subsurface damage measuring.

2.1 Terms and Definitions

The following terms and definitions apply to this document.

2.1.1 Subsurface damage

After the semiconductor crystal by cutting, grinding, polishing and other processing techniques, within a distance of about polished surface of the sub-micron range, part of the integrity of the crystal will

Damaged, there is a very thin (thickness is generally several tens to hundreds of nanometers) damage layer, in which there is a lot of dislocations, lattice distortion, etc. missing trap. The damaged layer called sub-surface damage layer.

2.1.2 Photoelastic effect

When there is stress or strain elastic medium, the dielectric constant or the refractive index of the medium change. Change the dielectric constant or refractive index

Variable closely related strain and applied stress. Anisotropic stress or strain will cause the dielectric function or refractive index anisotropy appears, guide

Organic crystal material appears optical anisotropy (birefringence, dichroism).

2.1.3 Optically anisotropic

When the optical properties of the material varies with the direction of propagation and the polarization state of the light, this material is said to have optical anisotropy.

2.1.4 Linearly polarized light

Vibration of the electric vector is always in a fixed plane of linearly polarized light is called.

2.1.5 Reflection difference spectrum reflectancedifferencespectroscopy, RDS

Measured near normal incidence conditions, the relative difference between the two orthogonal polarization of the incident light beam reflection coefficient with wavelength change is reflected poor

Spectrum points.

2.2 Symbol

The following symbols apply to this document.

2.2.1

deltar/r

The test crystalline material relative differences in two axis directions of the optical anisotropy of the reflection coefficient, i.e. differential reflection signal.

2.2.2

Reflectance measured crystal material.

GB/T 24582-2023 | GB/T 14849.1-2020 | GB/T 14849.3-2020 | GB/T 47080-2026 | GB/T 26074-2010 | GB/T 26067-2010 | […]