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GB/T 24580-2009Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry (English PDF)

重掺n型硅衬底中硼沾污的二次离子质谱检测方法

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Issued by

General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

Level / Type

National · Recommended

Issue date

October 30, 2009

Implementation date

June 1, 2010

Scope

GB/T 24580-2009 is the English-translated version of 重掺n型硅衬底中硼沾污的二次离子质谱检测方法.

GB/T 24580-2009 — 1.1 standard specifies the method of secondary ion mass spectrometry test heavily doped n-type silicon substrate boron contamination. This standard applies to secondary ion mass spectrometry Method (SIMS) of heavily doped n-type single crystal silicon substrate material of trace boron contamination (total) testing.

1.2 This standard applies to antimony, arsenic, phosphorus doping concentration 2 Normative references the following documents contain provisions which, through reference in this standard and become the standard terms.

For dated references, subsequent Amendments (not including errata content) or revisions do not apply to this standard, however, encourage the parties to the agreement are based on research Whether the latest versions of these documents.

For undated reference documents, the latest versions apply to this standard. ASTME122 evaluation batch process or a quality of the sample size selection specification

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Document preview — GB/T 24580-2009

National Standard of the People's Republic of China

ICS: 29.045
Classification: H 80

Issued by: General Administration of Quality Supervision, Inspection and Quarantine of the People's Republic of China, Standardization Administration of the People's Republic of China

What this standard covers1
Document data2
Standards quoted by this document3

What this standard covers

This standard specifies the method of secondary ion mass spectrometry heavily doped n-type silicon substrate boron contamination. This standard applies to secondary ion mass spectrometry (SIMS) for heavily doped n-type single crystal silicon substrate material shed trace contamination (total) test. This standard applies to antimony, arsenic, doped with phosphorus concentration GB/T 24580-2009 | Test method for measuring Boron contamination in heavily doped n-type silicon substrates by secondary ion mass spectrometry

Document data

International classification (ICS): 29.045.

Chinese classification (CCS): H80.

Estimated length of the Chinese original: 10,190 words.

Adopted international standard: SEMI MF1528-1104, MOD.

Standards quoted by this document

ASTM E122

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.

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