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GB/T 24577-2009Test methods for analyzing organic contaminants on silicon wafer surfaces by thermal desorption gas chromatography (English PDF)

热解吸气相色谱法测定硅片表面的有机污染物

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Issued by

Standardization Administration of China

Level / Type

National · Recommended

Issue date

October 30, 2009

Implementation date

June 1, 2010

Scope

GB/T 24577-2009 is the English-translated version of 热解吸气相色谱法测定硅片表面的有机污染物.

GB/T 24577-2009 — 1.1 standard provides qualitative and quantitative methods of organic pollutants in the wafer surface, using GC-MS or phosphorus selective detector or two who while using.

1.2 This standard describes the thermal desorption gas chromatography (TD-GC) and the related procedures for sample preparation and analysis. 1.3 The detection limit of the range depends on the detection of organic compounds such as hydrocarbons (C8 ~ C28) detection range is 10-12g/cm2 ~ 10-9g/cm2.

1.4 This standard applies to the polished silicon oxide layer and the silicon wafer. 1.5 standard contains two methods. A method suitable for wafer after cutting, Method B is applicable to the entire wafer. Two ways Different point method is described in detail in Section 7.

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Document preview — GB/T 24577-2009

National Standard of the People's Republic of China

ICS: 29.045
Classification: H 80

Issued by: Standardization Administration of China

What this standard covers1
Document data2
Standards quoted by this document3

What this standard covers

This standard specifies the qualitative and quantitative methods of organic pollutants in the wafer surface. Using GC-MS or phosphorus selective detector or both adopted. This standard applies to polished silicon wafers and silicon oxide layer.

Document data

International classification (ICS): 29.045.

Chinese classification (CCS): H80.

Estimated length of the Chinese original: 15,140 words.

Adopted international standard: SEMI MF1982-1103, MOD.

Standards quoted by this document

ASTM D6196

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 10 pages — is available in the English PDF.

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