GB/T 24576-2009Test method for measuring the Al fraction in AlGaAs on GaAs substrates by high resolution X-ray diffraction (English PDF)
高分辩率X射线衍射测量GaAs衬底生长的AlGaAs中Al成分的试验方法
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Issued by
Standardization Administration of China
Level / Type
National · Recommended
Issue date
October 30, 2009
Implementation date
June 1, 2010
Scope
GB/T 24576-2009 is the English-translated version of 高分辩率X射线衍射测量GaAs衬底生长的AlGaAs中Al成分的试验方法.
GB/T 24576-2009 — This standard specifies the test methods AlGaAs epitaxial layer Al content in high resolution X-ray diffraction measurements on the GaAs substrate.
This method is applicable to the determination of the direction of the GaAs substrate grown AlGaAs epitaxial layer Al content of in undoped, use when this method of measuring the Al element content, AlGaAs epitaxial layer thickness should be greater than 300nm.
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Document preview — GB/T 24576-2009
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 80
Issued by: Standardization Administration of China
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies test methods AIGaAs, Al content in the epitaxial layer by high resolution X -ray diffraction measurements on a GaAs substrate. This method is applicable to the determination of the direction of growth of the Al content in AlGaAs epitaxial layer in the GaAs substrate is undoped. When using this method to measure the Al content, AIGaAs epitaxial layer thickness should be greater than 300 nm.
Document data
International classification (ICS): 29.045.
Chinese classification (CCS): H80.
Estimated length of the Chinese original: 9,924 words.
Adopted international standard: SMEI M63-0306, IDT.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.
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