GB/T 15651.7-2024Semiconductor devices - Part 5-7: Optoelectronic devices - Photodiodes and phototransistors (English PDF)

1 Scope

This document specifies the terms, essential ratings and characteristics, and measuring methods for photodiodes (hereinafter referred to as the “PDs”) and phototransistors (hereinafter referred to as the “PTs”).

This document is applicable to photodiodes and phototransistors.

2 Normative References

This document has no normative references.

3 Terms and Definitions

The following terms and definitions are applicable to this document.

4 Essential Ratings and Characteristics of Photodiodes

The following ratings and characteristics apply to photodiodes (including fibre optic systems and subsystems):

a) Type

Environmentally rated or package-rated diodes for small-signal or switching applications.

b) Semiconductor materials

Silicon, gallium arsenide, indium phosphide, etc.

5 Essential Ratings and Characteristics of Phototransistors

The following ratings and characteristics apply to phototransistors (including fibre optic systems and subsystems):

a) Type

Environmentally rated or package-rated diodes for small-signal or switching applications.

b) Semiconductor materials

Silicon, etc.

c) Polarity

NPN/PNP.

d) Outline and packaging details

1) Outline drawing number from the referenced IEC and/or national standards;

2) Package type: Glass/metal/plastic/others;

3) Terminal identification and markings for any connections between the terminal and the package.

d) Description and requirements for the test device

The device under test is fixed to a test socket mounted on a calibrated optical base (State 1, State 2, State 3, or State 4) or on a calibrated device (State 3).

The light source shall be any of the following:

1) A standard light source (non-monochromatic) consisting of calibrated standard lamps, along with a matching regulated power supply and ammeter;

OR

2) A monochromatic light source, including one of the following two:

--- To the device described in 1) above, add an interference filter or any other system (monochromator, etc.) with a specified or known peak transmission wavelength and spectral radiation bandwidth;

--- Any other calibrated device with a known peak emission wavelength and spectral radiation bandwidth (e.g., a light emitting diode or an infrared emitting diode).

Regarding optical fibre devices with pigtails: The light source described in 2) shall be used.

e) Precautions

--- Overheating of the device under test due to optical radiation shall be avoided; when the radiation exceeds 200 W/m

2 , it is recommended to install a heat shield as a shutter to limit the exposure duration;

--- The cleanliness of the optical surfaces shall be ensured;

--- The light source shall be stabilized between measurements;

--- When a standard light source is used as a light source, the diaphragm to suppress parasitic radiation shall be placed in front of the device under test.

For devices with pigtails, the device's optical port shall be illuminated.

f) Test procedure

Under specified temperature conditions, place the tube socket at a certain distance from the light source, which shall have the specified illuminance (irradiance); insert the device under test into the tube socket and apply the specified bias.

For State 1 only, the device rotates about its mechanical axis, and the minimum and maximum current values on the ammeter are read under radiation.

For States 2, 3, or 4, the current value under optical irradiation is read from the ammeter.

g) Specified conditions

--- Ambient or package temperature;

--- Bias conditions of the device under test (DC or pulse);

--- Measuring methods (different from this document);

--- Illuminance or irradiance;

--- Standard light source (non-monochromatic), or wavelength and spectral radiation bandwidth (monochromatic).

Regarding devices with pigtails:

--- Ambient or package temperature;

--- Bias conditions of the device under test;

--- Radiated power entering the optical port;

--- Wavelength and spectral radiation bandwidth of the light source.

6.3 Dark Current IR(D) of A Photodiode and Dark Currents ICEO, IECO , IEBO of A Phototransistor a) Purpose

To measure the dark current of a photodiode and dark current of a phototransistor under specified conditions.

b) Circuit diagrams

The test circuit diagrams are shown in Figure 9.

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Translated by: Field Test Asia Pte. Ltd. (Incorporated & taxed in Singapore. Tax ID: 201302277C)

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