YS/T 24-2016Test methods for spike of epitaxial layers (English PDF)
外延钉缺陷的检验方法
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
April 5, 2016
Implementation date
September 1, 2016
Scope
YS/T 24-2016 is the English-translated version of 外延钉缺陷的检验方法.
YS/T 24-2016 — This standard specifies the inspection method for the extension of the nail defect. This standard applies to determine whether there is a nail defect with a height of not less than 4 mm on the silicon epitaxial wafer.
If the number of nail defects is relatively small and he this is not connected, the nail defect can be counted. This standard can not measure the height of nail defects.
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Document preview — YS/T 24-2016
National Standard of the People's Republic of China
- ICS
- 29.045
- Classification
- H 21
- Replacing
- YS/T 24-1992
Issued by: Ministry of Industry and Information Technology
Contents
- Document data1
Document data
International classification (ICS): 29.045.
Chinese classification (CCS): H21.
Estimated length of the Chinese original: 5,516 words.
Supersedes the earlier edition YS/T 24-1992.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 4 pages — is available in the English PDF.
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