YB/T 4462-2015High purity ferrosilicon. Determination of boron content. Inductively coupled plasma atomic emission spectrometric method (English PDF)
高纯硅铁硼含量的测定电感耦合等离子体原子发射光谱法
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
April 30, 2015
Implementation date
October 1, 2015
Scope
YB/T 4462-2015 is the English-translated version of 高纯硅铁硼含量的测定电感耦合等离子体原子发射光谱法.
YB/T 4462-2015 — This Standard specifies the determination of boron in high purity ferrosilicon by inductively coupled plasma atomic emission spectrometry (ICP-AES).
This Standard applies to the determination of boron in high purity ferrosilicon.
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Document preview — YB/T 4462-2015
National Standard of the People's Republic of China
- ICS
- 77.100
- Classification
- H 11
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This Standard specifies the determination of boron in high purity ferrosilicon by inductively coupled plasma atomic emission spectrometry (ICP-AES). This Standard applies to the determination of boron in high purity ferrosilicon. Measurement range (mass fraction): 0.001% to 0.010%.
Document data
International classification (ICS): 77.100.
Chinese classification (CCS): H11.
Estimated length of the Chinese original: 9,951 words.
Standards quoted by this document
GB/T 4010; GB/T 6682; GB/T 12806; GB/T 12807; GB/T 12808
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 7 pages — is available in the English PDF.
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