SJ/T 2658.4-2015Measuring method for semiconductor infrared-emitting diode. Part 4: Total capacitance (English PDF)
半导体红外发射二极管测量方法 第4部分:总电容
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
October 10, 2015
Implementation date
April 1, 2016
Scope
SJ/T 2658.4-2015 is the English-translated version of 半导体红外发射二极管测量方法 第4部分:总电容.
SJ/T 2658.4-2015 — This standard specifies the measurement principle, measurement procedure and specified conditions of the total capacitance of the semiconductor infrared emission diode (hereinafter referred to as device).
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Document preview — SJ/T 2658.4-2015
National Standard of the People's Republic of China
- ICS
- 31.08
- Classification
- L 53
- Replacing
- SJ/T 2658.4-1986
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
- Standards quoted by this document3
What this standard covers
This standard specifies the measurement principle, measurement procedure and specified conditions of the total capacitance of the semiconductor infrared emission diode (hereinafter referred to as device). This standard applies to semiconductor infrared emitting diodes.
Document data
International classification (ICS): 31.08.
Chinese classification (CCS): L53.
Estimated length of the Chinese original: 4,470 words.
Supersedes the earlier edition SJ/T 2658.4-1986.
Standards quoted by this document
SJ/T 2658.1
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 3 pages — is available in the English PDF.
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Related Standards
SJ/T 2658.1-2015 — Measuring method for semiconductor infrared-emitting diode. Part 1: General
SJ/T 2658.10-2015 — Measuring method for semiconductor infrared-emitting diode. Part 10: Modulation bandwidth
SJ/T 2658.11-2015 — Measuring method for semiconductor infrared-emitting diode. Part 11: Response time
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