SJ/T 2658.14-2016Measuring method for semiconductor infrared-emitting diode - Part 14: Junction temperature (English PDF)
半导体红外发射二极管测量方法 第14部分:结温
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Issued by
Ministry of Industry and Information Technology
Level / Type
National · Recommended
Issue date
January 15, 2016
Implementation date
June 1, 2016
Scope
SJ/T 2658.14-2016 is the English-translated version of 半导体红外发射二极管测量方法 第14部分:结温.
SJ/T 2658.14-2016 — This standard specifies the measurement principle diagram, measurement procedure and specified conditions for the junction temperature of semiconductor infrared emitting diodes. Suitable for semiconductor infrared emitting diodes.
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Document preview — SJ/T 2658.14-2016
National Standard of the People's Republic of China
- Classification
- L 53
Issued by: Ministry of Industry and Information Technology
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard specifies the measurement principle diagram, measurement procedure and specified conditions for the junction temperature of semiconductor infrared emitting diodes. Suitable for semiconductor infrared emitting diodes.
Document data
Chinese classification (CCS): L53.
Estimated length of the Chinese original: 5,547 words.
......
This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 4 pages — is available in the English PDF.
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Related Standards
SJ/T 2658.1-2015 — Measuring method for semiconductor infrared-emitting diode. Part 1: General
SJ/T 2658.10-2015 — Measuring method for semiconductor infrared-emitting diode. Part 10: Modulation bandwidth
SJ/T 2658.11-2015 — Measuring method for semiconductor infrared-emitting diode. Part 11: Response time
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SJ/T 2658.14-2016
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