SJ 797-1974Detail specification for silicon NPN epitaxial planar high frequency low power high reverse voltage transistors, Type 3DG161 (English PDF)
3DG161型NPN硅平面高频小功率高反压三极管
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Issued by
Ministry of Industry and Information Technology of PRC
Level / Type
National · Mandatory
Issue date
October 1, 1974
Implementation date
October 1, 1974
Scope
SJ 797-1974 is the English-translated version of 3DG161型NPN硅平面高频小功率高反压三极管.
SJ 797-1974 — This standard applies to 3DG161 silicon NPN planar high frequency low power semiconductor transistor backpressure. The product is used in electronic devices for switching and high frequency amplification and oscillation.
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Document preview — SJ 797-1974
National Standard of the People's Republic of China
- Classification
- L 42
Contents
- What this standard covers1
- Document data2
What this standard covers
This standard applies to 3DG161 silicon NPN planar high frequency low power semiconductor transistor backpressure. The product is used in electronic devices for switching and high frequency amplification and oscillation.
Document data
Chinese classification (CCS): L42.
Estimated length of the Chinese original: 8,835 words.
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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 6 pages — is available in the English PDF.
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SJ 797-1974
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