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SJ 3249.1-1989Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material (English PDF)

半绝缘砷化镓和磷化铟体单晶材料的电阻率测试方法

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Issued by

Ministry of Industry and Information Technology

Level / Type

National · Mandatory

Issue date

March 20, 1989

Implementation date

March 25, 1989

Scope

SJ 3249.1-1989 is the English-translated version of 半绝缘砷化镓和磷化铟体单晶材料的电阻率测试方法.

SJ 3249.1-1989 is the Chinese standard "Methods of measurement for resistivity of semi-insulation Gallium arsenide and Indium phosphide single crystal material". Issued on 3/20/1989, in force from 3/25/1989.

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Document preview — SJ 3249.1-1989

National Standard of the People's Republic of China

Classification: H83;L90

Document data

1 Document data

Sector: Electronics Industry Standard.

Date of issue: 3/20/1989.

Date of implementation: 3/25/1989.

Chinese Standard Classification: H83;L90.

Length: about 8,872 characters in the Chinese original.

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This preview omits tables, figures, formulas and parts of the technical clauses. The complete document — 8 pages — is available in the English PDF.

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